[1] [1] Wang Y, Chen S Y, Wang X R, et al. Millisecond annealing for advanced device fabrications[C]// 20th Inter. Conf. on Ion Implantation Technol., 2014: 1-6.

[2] [2] Choi C S, Yeo S C, Kim D, et al. Study of shallow backside junctions for backside illumination of CMOS image sensors[J]. J. Electron. Mater., 2014, 43(11): 3933-3941.

[3] [3] De Munck K, Bogaerts J, Tezcan D S, et al. Backside thinned CMOS imagers with high broadband quantum efficiency realized using new integration process[J]. Electron. Lett., 2008, 44(1): 50-52.

[9] [9] Graaf G D, Wolffenbuttel R F. Illumination source identification using a CMOS optical microsystem[J]. IEEE Trans. on Instrumentation and Measurement, 2004, 53(2): 238-242.

[10] [10] Eggermont G E J, Gee S A, Kessel C G M V, et al. Thermal annealing of microcracks produced by backside laser irradiation of silicon[J]. Appl. Phys. Lett., 1982, 41: 1133-1135.

[11] [11] Janesike J R. Scientific Charge-Coupled Device[M]. SPIE Press.