Laser annealing is an important process of eliminating the backside well of the backside-illuminated charge-coupled devices (CCD) image sensors. The influences of different laser wavelengths, energy densities, overlap rate of laser spots on doping activation rate, device surface morphology, imaging quality and ultraviolet (UV) quantum efficiency of CCD were investigated. The results show that, the doping activation rate of 355nm laser is higher than that of 532nm laser at shallow junction implantation. However, the presence of wafer crack is easier to appear at low energy density when using 355nm laser. By adopting energy density of 2J/cm2 and 50%~65% cross rate of 355nm laser, the boron doping is efficiently activated, the imaging uniformity of backside-illuminated CCD is achieved, and the UV quantum efficiency of CCD is significantly improved.