Effect of High-temperature Annealing on the Properties of ZnS Thin Films Grown by Low-temperature Sulfurization

WANG Pengjie; ZHANG Rengang; ZHANG Chao; ZHANG Peng; CAO Xingzhong; WANG Baoyi

doi:10.16818/j.issn1001-5868.2024082401

Semiconductor Optoelectronics, Volume. 45, Issue 6, 904(2024)

Effect of High-temperature Annealing on the Properties of ZnS Thin Films Grown by Low-temperature Sulfurization

WANG Pengjie1... ZHANG Rengang1, ZHANG Chao1, ZHANG Peng2, CAO Xingzhong2 and WANG Baoyi2 |Show fewer author(s)

¹Hubei Province Key Laboratory of Systems Science in Metallurgical Process, Wuhan University of Science and Technology, Wuhan 430081, CHN

²Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, CHN

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WANG Pengjie, ZHANG Rengang, ZHANG Chao, ZHANG Peng, CAO Xingzhong, WANG Baoyi. Effect of High-temperature Annealing on the Properties of ZnS Thin Films Grown by Low-temperature Sulfurization[J]. Semiconductor Optoelectronics, 2024, 45(6): 904

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Received: Aug. 24, 2024

Accepted: Feb. 28, 2025

Published Online: Feb. 28, 2025

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DOI:10.16818/j.issn1001-5868.2024082401

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

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