Chinese Optics Letters, Volume. 10, Issue 1, 013102(2012)
Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices
References(26)
[1] [1] G. I. Meijer, Science 319, 1625 (2008).
[2] [2] R. Waser and M. Aono, Nat. Mater. 6, 833 (2007).
[3] [3] M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater. 19, 2232 (2007).
[4] [4] H. Guo, L. Gao, Y. Xia, K. Jiang, B. Xu, Z. Liu, and J. Yin, Appl. Phys. Lett. 94, 153504 (2009).
[5] [5] W. L. Kwan, B. Lei, Y. Shao, and Y. Yang, Curr. Appl. Phys. 10, e50 (2010).
[6] [6] W. Guan, S. Long, Q. Liu, M. Liu, and W. Wang, IEEE Electron Device Lett. 29, 434 (2008).
[7] [7] J. W. Seo, J.-W. Park, K. S. Lim, J.-H. Yang, and S. J. Kang, Appl. Phys. Lett. 93, 223505 (2008).
[10] [10] C. K¨ugeler, R. Weng, H. Schroeder, R. Symanczyk, P. Majewski, K.-D. Ufert, R. Waser, and M. Kund, Thin Solid Films 518, 2258 (2010).
[11] [11] S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D.-W. Kim, and T. W. Noh, Phys. Rev. Lett. 102, 026801 (2009).
[12] [12] Y. H. Do, J. S. Kwak, Y. C. Bae, K. Jung, H. Im, and J. P. Hong, Thin Solid Films 518, 4408 (2010).
[13] [13] W. Zhu, T. P. Chen, Z. Liu, M. Yang, Y. Liu, and S. Fung, J. Appl. Phys. 106, 093706 (2009).
[14] [14] W.-Y. Chang, Y.-C. Lai, T.-B. Wu, S.-F. Wang, F. Chen, and M.-J. Tsai, Appl. Phys. Lett. 92, 022110 (2008).
[15] [15] C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, and T.-Y. Tseng, J. Appl. Phys. 102, 094101 (2007).
[16] [16] J. Y. Son and Y. H. Shin, Appl. Phys. Lett. 92, 222106 (2008).
[17] [17] N. Xu, L. Liu, X. Sun, C. Chen, Y. Wang, D. Han, X. Liu, R. Han, J. Kang, and B. Yu, Semicond. Sci. Technol. 23, 075019 (2008).
[18] [18] N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett. 92, 232112 (2008).
[19] [19] J.-H. Choi, S. N. Das, and J.-M. Myounga, Appl. Phys. Lett. 95, 062105 (2009).
[20] [20] Z. Ji, Q. Maoa, and W. Ke, Solid State Commun. 150, 1919 (2010).
[21] [21] Y. Yang, F. Pan, F. Zeng, and M. Liu, J. Appl. Phys. 106, 123705 (2009).
[22] [22] Y. Yang, F. Pan, Q. Liu, M. Liu, and F. Zeng, Nano Lett. 9, 1636 (2009).
[23] [23] B. Sun, Y. Liu, L. Liu, N. Xu, Y. Wang, X. Liu, R. Han, and J. Kang, J. Appl. Phys. 105, 061630 (2009).
[24] [24] X. Wu, P. Zhou, J. Li, L. Chen, H. Lv, Y. Lin, and T. Tang, Appl. Phys. Lett. 90, 183507 (2007).
[25] [25] Z. Wang, P. B. Griffin, J. M. Vittie, S. Wong, P. C. McIntyre, and Y. Nishi, IEEE Electron Device Lett. 28, 14 (2007).
[26] [26] S. Zhang, S. Long, W. Guan, Q. Liu, Q. Wang, and M. Liu, J. Phys. D 42, 055112 (2009).
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Jianwei Zhao, Fengjuan Liu, Jian Sun, Haiqin Huang, Zuofu Hu, Xiqing Zhang. Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices[J]. Chinese Optics Letters, 2012, 10(1): 013102
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Received: Mar. 14, 2011
Accepted: Jun. 10, 2011
Published Online: Aug. 8, 2011
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