Infrared and Laser Engineering, Volume. 50, Issue S2, 20210305(2021)
Analysis of the transient response signal of a silicon-based PIN photodiode irradiated by picosecond laser
Figures & Tables(9)
Fig. 3. Peak voltage of irradiated diodes with different laser energy densities
Fig. 4. Single pulse signal response waveform under different laser energy densities
Fig. 5. Rising edge time of the diode irradiated by different laser energy densities
Fig. 6. Half-height width of diodes irradiated by different laser energy densities
Fig. 7. Bottom width of diodes irradiated by different laser energy densities
Table 1. Device pulse signal FWHM changes
View tableView in ArticleTable 1. Device pulse signal FWHM changes
Item Absolute increase/μs Relative increase Before saturation 14.3 38.44% After saturation 61.5 119.42%
Table 2. Device pulse signal BW changes
View tableView in ArticleTable 2. Device pulse signal BW changes
Project Absolute increase/μs Relative increase Before saturation 38 21% After saturation 103 47.03%
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Meng Yao, Jifei Ye, Lan Li, Heyan Gao. Analysis of the transient response signal of a silicon-based PIN photodiode irradiated by picosecond laser[J]. Infrared and Laser Engineering, 2021, 50(S2): 20210305
Paper Information
Category: Lasers and laser optics
Received: May. 11, 2021
Accepted: --
Published Online: Dec. 3, 2021
The Author Email: Ye Jifei (yjf981@163.com)
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