Acta Optica Sinica, Volume. 42, Issue 4, 0412002(2022)

Gain Coefficient Process Dependency of Focusing and Leveling Sensor

Shengsheng Sun1,2、**, dan Wang1, and Mingcheng Zong1,2、*
Author Affiliations
  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(10)
    Schematic diagram of imaging system model of focusing and leveling sensor
    Relationship between fitting error and polynomial fitting order
    Change of gain coefficient with film thickness. (a) First-order gain coefficient; (b) second-order gain coefficient; (c) third-order gain coefficient; (d) fourth-order gain coefficient; (e) fifth-order gain coefficient
    Theoretically simulated results of measurement error varying with film thickness. (a) Using standard bare silicon wafers for calibrating; (b) using silicon wafer with specific process film on surface for calibrating
    Physical picture of silicon wafer coated with SiO2 film
    Comparison of experimental and simulation results. (a) Variation of measurement error with film thickness; (b) variation of first-order gain coefficient with film thickness
    • Table 1. Silicon substrate, refractive index, and Cauchy coefficient of photoresist in simulation model

      View table

      Table 1. Silicon substrate, refractive index, and Cauchy coefficient of photoresist in simulation model

      MaterialRefractive index at 800 nmCauchy coefficient
      N1N2 /μm-2N3 /μm-4
      PAR8701.461.458150.0158610.000550
      PI61331.521.499300.007264-0.000210
      TAI70921.501.497600.0100780.000775
      SiO21.47---
      Si3.68---
    • Table 2. Measurement error caused by change of each gain coefficient

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      Table 2. Measurement error caused by change of each gain coefficient

      CoefficientInitial valueChange valueMeasurementerror /nm
      α14.00140.180062.8
      α2-0.00130.00141.8
      α31.63210.20005.3
      α40.02230.03001.8
      α52.23730.65001.8
    • Table 3. Gain coefficient of each order for SiO2 film thicknesses of 0, 250, and 690 nm

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      Table 3. Gain coefficient of each order for SiO2 film thicknesses of 0, 250, and 690 nm

      SiO2 film thickness /nmCoefficient
      α1α2α3α4α5
      04.0014-0.00131.63210.02232.2373
      2504.1081-0.00181.75600.03352.6501
      6904.0647-0.00171.70570.03122.4659
    • Table 4. Maximum measurement error and first-order gain coefficient for different SiO2 film thickness

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      Table 4. Maximum measurement error and first-order gain coefficient for different SiO2 film thickness

      Experimental No.SiO2 thickness /nmα1Measurement error 1at 1.25 μm /nmMeasurement error 2at 1.25 μm /nm
      149.24.010922.98.7
      2100.53.97092.8-6.6
      3150.33.987510.90.2
      4201.24.105848.6-7.1
      5253.84.120055.9-11.3
      6305.84.013823.3-1.1
      7357.73.971211.60.5
      8406.73.96077.712.6
      9455.63.94850.7-2.7
      10502.83.943214.215.3
      11549.33.9614-2.2-1.4
      12592.33.991818.7-2.7
      13651.54.027431.26.6
      14695.44.061836.6-4.1
      15757.84.047133.30.6
      16807.63.968424.36.0
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    Shengsheng Sun, dan Wang, Mingcheng Zong. Gain Coefficient Process Dependency of Focusing and Leveling Sensor[J]. Acta Optica Sinica, 2022, 42(4): 0412002

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    Paper Information

    Category: Instrumentation, Measurement and Metrology

    Received: Aug. 9, 2021

    Accepted: Aug. 31, 2021

    Published Online: Jan. 29, 2022

    The Author Email: Sun Shengsheng (sunshengsheng@ime.ac.cn), Zong Mingcheng (zongmingcheng@ime.ac.cn)

    DOI:10.3788/AOS202242.0412002

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