Photonics Research, Volume. 8, Issue 7, 1110(2020)
Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth Editors' Pick
Fig. 1. (a) Schematic epitaxial structure. (b) HRTEM image of the QWs. (c)
Fig. 2. (a) TDPL spectra of the InGaN QDs sample. (b) Peak wavelength and FWHM of TDPL spectra versus measurement temperatures. (c) PL decay curve of the InGaN QDs sample at 300 K.
Fig. 3. (a) Voltage-current and optical power-current characteristics of InGaN QDs LEDs. (b) EL spectra of the InGaN QDs LEDs with injection current varying. (c) The change of red, green, and blue peaks’ position with injection current varying. (d) Intensity ratio in red, green, and blue peaks versus injection current. (e) EL images of InGaN QDs LEDs at injection currents of 5, 10, 20, 100, and 150 mA.
Fig. 4. Schematic illustration of the carrier recombination mechanism of InGaN QDs based single chip WLED.
Fig. 5. (a) CIE-1931 chromaticity coordinates. (b) CCT and CRI of single chip WLED versus injection current.
Fig. 6. (a) The frequency response and (b) bandwidth of single chip WLED versus injection current density. (c) EL spectra of the single chip WLED at
Fig. 7. (a) The BER and (b) eye diagram versus the data rate of single chip WLED at
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Rongqiao Wan, Xiang Gao, Liancheng Wang, Shuo Zhang, Xiongbin Chen, Zhiqiang Liu, Xiaoyan Yi, Junxi Wang, Junhui Li, Wenhui Zhu, Jinmin Li. Phosphor-free single chip GaN-based white light emitting diodes with a moderate color rendering index and significantly enhanced communications bandwidth[J]. Photonics Research, 2020, 8(7): 1110
Category: Optoelectronics
Received: Mar. 4, 2020
Accepted: Apr. 28, 2020
Published Online: Jun. 3, 2020
The Author Email: Liancheng Wang (liancheng_wang@csu.edu.cn), Xiaoyan Yi (spring@semi.ac.cn)