Researching | Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate

Journal of Synthetic Crystals, Volume. 49, Issue 11, 2178(2020)

Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate

YUAN Ziyuan1,*... PAN Rui1, XIA Shunji1, WEI Lian1, YE Jiajia1, LI Chen1, CHEN Yanfeng1, and LU Hong12 |Show fewer author(s)

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High quality heteroepitaxy is the key to realize high performance microelectronic devices. In this work, Si1-xGex (0

Keywords

Ge on Si Ge quantum dot heteroepitaxy interfacial modulation molecular beam epitaxy Si1-xGex alloy

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YUAN Ziyuan, PAN Rui, XIA Shunji, WEI Lian, YE Jiajia, LI Chen, CHEN Yanfeng, LU Hong. Epitaxial Growth and Characterizations of Si1-xGex Alloys on Si Substrate[J]. Journal of Synthetic Crystals, 2020, 49(11): 2178

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Received: --

Accepted: --

Published Online: Jan. 26, 2021

The Author Email: Ziyuan YUAN (yzy3673759@163.com)

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Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology