[2] [2] Brukilacchio T,DeMilo C. Beyond the limitations of today's LED packages: optimizing high brightness LED performance by a comprehensive systems design approach [C]//Proc. of SPIE,2004,5366: 161-172.

[3] [3] Bremser M,Luenenbuerger M,Protzmann H. Highly efficient InGaN/GaN MQW for blue and green light emitting structures grown in production MOVPE reactors [C]//Proc. of SPIE,2000,3938,100.

[4] [4] Venugopalana H S,Gaoa X,Zhang T,et al. Fabrication of high-lumen InGaN flip chip LEDs [C]// Proc. of SPIE,2004,5187: 260-266.

[5] [5] Fujii T,Gao Y,Sharma R. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].Appl. Phys. Lett.,2004,84(6): L855.

[6] [6] Krames M R,Ochiai-Holcomb M,Hofler G E. High-power truncated-inverted-pyramid.(AlxGa1－x)0.5 In0.5P/GaP light-emitting diodes exhibiting＞50% external quantum efficiency [J].Appl. Phys. Lett.,1999,75(16): L2365.

[8] [8] Kim H,Lee Ji-Myon,Huh Chul. Modeling of a GaN-based light-emitting diode for uniform current spreading [J].Appl. Phys. Lett.,2000,77(12): L1903.