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Optoelectronics Letters, Volume. 12, Issue 1, 56(2016)

Enhanced emission at 2.85 μm of Ho3+/Pr3+co-doped α-NaYF4single crystal

Cheng WANG1... Hai-ping XIA1,*, Zhi-gang FENG1, Zhi-xiong ZHANG1, Dong-sheng JIANG1, Jian ZHANG1, Qi-guo SHENG1, Qing-yang TANG1, Shi-nan HE1, Hao-chuan JIANG2 and Bao-jiu CHEN3 |Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Photoelectronic Materials, Ningbo University, Ningbo 315211, China
  • 2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315211, China
  • 3Department of Physics, Dalian Maritime University, Dalian 116026, China
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    WANG Cheng, XIA Hai-ping, FENG Zhi-gang, ZHANG Zhi-xiong, JIANG Dong-sheng, ZHANG Jian, SHENG Qi-guo, TANG Qing-yang, HE Shi-nan, JIANG Hao-chuan, CHEN Bao-jiu. Enhanced emission at 2.85 μm of Ho3+/Pr3+co-doped α-NaYF4single crystal[J]. Optoelectronics Letters, 2016, 12(1): 56

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    Paper Information

    Received: Nov. 5, 2015

    Accepted: --

    Published Online: Oct. 12, 2017

    The Author Email: Hai-ping XIA (hpxcm@nbu.edu.cn)

    DOI:10.1007/s11801-016-5221-4

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology