Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Tiantian Luan; Sen Huang; Guanjun Jing; Jie Fan; Haibo Yin; Xinguo Gao; Sheng Zhang; Ke Wei; Yankui Li; Qimeng Jiang; Xinhua Wang; Bin Hou; Ling Yang; Xiaohua Ma; Xinyu Liu

doi:10.1088/1674-4926/23120006

Journal of Semiconductors, Volume. 45, Issue 6, 062301(2024)

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

Tiantian Luan, Sen Huang^*, Guanjun Jing, Jie Fan, Haibo Yin, Xinguo Gao, Sheng Zhang, Ke Wei, Yankui Li, Qimeng Jiang, Xinhua Wang, Bin Hou, Ling Yang, Xiaohua Ma, and Xinyu Liu

Author Affiliations

High-Frequency High-Voltage Device and Integrated Circuits R & D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China

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References(32)

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Tiantian Luan, Sen Huang, Guanjun Jing, Jie Fan, Haibo Yin, Xinguo Gao, Sheng Zhang, Ke Wei, Yankui Li, Qimeng Jiang, Xinhua Wang, Bin Hou, Ling Yang, Xiaohua Ma, Xinyu Liu. Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate[J]. Journal of Semiconductors, 2024, 45(6): 062301

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Paper Information

Category: Articles

Received: Dec. 7, 2023

Accepted: --

Published Online: Jul. 8, 2024

The Author Email: Huang Sen (SHuang)

DOI:10.1088/1674-4926/23120006

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