Fig. 1. Schematic cross-section of AlGaN/GaN HEMT: (a) Conventional AlGaN/GaN HEMT; (b) AlGaN/GaN HEMT with barrier layer local groove structure.AlGaN/GaN HEMT结构示意图　(a)传统AlGaN/GaN HEMT; (b)势垒层局部凹槽结构AlGaN/GaN HEMT

Fig. 2. Pulse simulation voltage bias conditions.脉冲仿真电压偏置条件

Fig. 3. Current collapse effect under double pulse.双脉冲下的电流崩塌效应

Fig. 4. channel electron concentration curves.沟道电子浓度曲线

Fig. 5. Probability distribution of electron occupying trap at different times: (a) t = 1 × 10^–6 s; (b) t = 1 × 10^–3 s; (c) t = 0.1 s; (d) direct current. 不同时刻电子占据陷阱的概率分布情况　(a) t = 1 × 10^–6 s; (b) t = 1 × 10^–3 s; (c) t = 0.1 s; (d)直流情况

Fig. 6. Concentration distribution of electron occupying trap: (a) t = 0.5 × 10^–7 s; (b) t = 1.05 × 10^–7 s; (c) t = 1.1 × 10^–7 s; (d) t = 1 × 10^–6 s. 电子占据陷阱的浓度分布情况　(a) t = 0.5 × 10^–7 s; (b) t = 1.05 × 10^–7 s; (c) t = 1.1 × 10^–7 s; (d) t = 1 × 10^–6 s

Fig. 7. Channel electric field at the edge of the gate.栅极边缘处沟道电场

Fig. 8. Electron concentration at the edge of the gate as a function of time.栅极边缘电子浓度随时间的变化

Fig. 9. Channel electric field distribution of groove structure and conventional structure device.凹槽结构与传统结构器件的沟道电场分布

Fig. 10. Comparison of current collapse between groove structure and conventional structural devices.凹槽结构与传统结构器件的电流崩塌对比

Fig. 11. Channel electric field distribution at different times for the groove structure and the conventional structure device.凹槽结构与传统结构器件在不同时刻的沟道电场分布

Fig. 12. Channel electron concentration distribution at different times for the groove structure and the conventional structure device.凹槽结构与传统结构器件在不同时刻沟道电子浓度分布

Fig. 13. Electron occuping buffer layer trap concentration as a function of time.电子占据缓冲层陷阱浓度随时间的变化