Journal of Inorganic Materials, Volume. 34, Issue 1, 37(2019)

Application and Development of Cesium Lead Halide Perovskite Based Planar Heterojunction LEDs

Lou-Wen ZHANG1... Shao-Li SHEN2, Lu-Ying LI2, Zhi ZHANG1, Ni-Shuang LIU1, Yi-Hua GAO1,2, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]1, [in Chinese]1, and [in Chinese]12 |Show fewer author(s)
Author Affiliations
  • 11. School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 22. Center for Nanoscale Characterization & Devices, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
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    Figures & Tables(9)
    Optimization strategies for luminescence performance and stability of LED devices
    Schematic diagram of the device structures (a, b) and working mechanism (c) for perovskite based planar heterojunction LEDs
    (a) Schematic diagram of device structure; (b) Cross-sectional TEM image. Scale bar, 50 nm; (c) Flat-band energy level diagram; (d) The EL spectra (straight line) of devices for CsPb(Cl/Br)3, CsPbBr3 and CsPb(Br/I)3 under applied voltage of 5.5 V, and the photoluminescence (PL) spectra (dashed line) of QDs dispersed in hexane[58]
    (a) Schematic illustration of device structure and a cross-sectional TEM image (scale bar: 50 nm); (b) Normalized EL spectra (solid lines) and PL spectra (dashed lines) of CsPbBr3 QLEDs with two purifying cycles. Inset in (b): The photograph of a working device at an applied voltage of 5 V; (c) EQE of these devices for QDs with different purifying cycles as a function of luminance[59]
    (a) Structural representation of CsPbBr3 based LEDs; (b) Current efficiency-voltage (CE-V), and EQE-voltage (EQE-V) characteristic curves[68]; The surface morphology of CsPbBr3 film and surface luminous photo of LED (c) without treatment and (d) with chlorobenzene treatment[69]
    (a) EQE and CE as a function of voltage among devices fabricated with different ETL and HTL materials[77]; (b) EQE-V curves for the LEDs with different PEG:CsPbBr3 (CsBr:PbBr2 molar ratio of 1.4:1) weight ratios[78]; (c) TEM image of cross section of device and corresponding schematic diagram of device structure; (d) EQE for the devices with and without Ag rod[79]
    (a) Overall energy band diagram of the LED structure; (b) EQE and CE vs current density of devices with or without PFI interface modifier[85]; (c) Schematic diagram of device structure; (d) CE and EQE of devices with and without PVP buffer layer, with and without CH3NH3Br (MABr) additive[51]
    (a) Schematic illustration of device structure; (b) EQE of the devices as a function of luminance[90]; (c) Band alignment of each functional layer; (d) EQE of the devices as a function of driving voltage[91]
    (a) Simplified energy band alignment of the LED; (b) Luminous efficiency and EQE versus voltage of the LED[99]; (c) Schematic illustration of solution-processed perovskite LED; (d) EQE, CE, and power efficiency versus voltage of the LED[102]
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    Lou-Wen ZHANG, Shao-Li SHEN, Lu-Ying LI, Zhi ZHANG, Ni-Shuang LIU, Yi-Hua GAO, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Application and Development of Cesium Lead Halide Perovskite Based Planar Heterojunction LEDs[J]. Journal of Inorganic Materials, 2019, 34(1): 37

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    Paper Information

    Category: Research Articles

    Received: Apr. 24, 2018

    Accepted: --

    Published Online: Feb. 4, 2021

    The Author Email:

    DOI:10.15541/jim20180176

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