Chinese Optics Letters, Volume. 19, Issue 7, 071301(2021)

Passive devices at 2 µm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]

Hui Ma1, Haotian Yang1, Bo Tang2, Maoliang Wei1, Junying Li1, Jianghong Wu3,4, Peng Zhang2, Chunlei Sun3,4, Lan Li3,4, and Hongtao Lin1、*
Author Affiliations
  • 1State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310007, China
  • 2Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
  • 3Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310007, China
  • 4Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310023, China
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    Figures & Tables(7)
    Schematic diagram of the measurement system. PR, polarization rotator; DUT, device-under-test; PD, photodetector; TIA, trans-impedance amplifier; DAQ, data acquisition card; PC, personal computer.
    (a) Cross-section diagram of the SOI ridge waveguide. (b) Calculated effective refractive index of the fundamental (black) and first-order (red) TE modes as a function of the ridge waveguide width at 2025 nm. Inset: the spatial distribution of the fundamental and second-order polarized optical modes into the SOI ridge waveguide with a width of 0.6 µm and 1.4 µm at 2025 nm, respectively.
    (a) Measured spectral response of an MRR without doping. Inset: enlarged view of the measured resonance peak obtained by Lorentzian fitting and top-view SEM image of the MRR. (b) The measured spectral response of an MRR with light p-type doping.
    (a) Simulated and measured coupling efficiency of the grating coupler. (b) Top-view SEM image of the fabricated GC.
    (a) Simulated transmission spectra of the crossing from port 1 to ports 2 and 3 [the port numbers are shown in (b-2)]. Inset: electric field distribution at 2025 nm. (b) Microscope and SEM images of the cascaded and single crossing. (b-1) Microscope view of cascaded crossing with numbers 15, 30, and 45, and the device structure for crosstalk test; (b-2) enlarged view of the structure for crosstalk test; (b-3) enlarged view of a single crossing. (c) Cut-back measurements for characterizing the insertion loss of crossings. (d) Measurements of the device crosstalk.
    (a) Simulated transmission spectrum of the 1 × 2 MMI at the wavelength of 2005–2035 nm. Inset: electric field distribution at the wavelength of 2020 nm. (b-1) Microscope view of cascaded 1 × 2 MMIs; the white numbers 0–7 represent the port number; (b-2) zoom-in SEM image of 1 × 2 MMI. (c) Measured transmission spectra of the 1 × 2 MMI at the wavelength of 2025 nm. (d) Total insertion losses as a function of the number of cascaded 1 × 2 MMIs at the wavelength range of 2020–2030 nm. The port numbers shown in (c) correspond to the number marked in (b-1), for example, the curve 0-1 shows the transmission spectrum from port 0 to 1.
    (a) Optical image of the fabricated MZI. Ports 1 and 2 represent the input and output ports of the MZI. (b) Measured transmission spectrum of the MZI.
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    Hui Ma, Haotian Yang, Bo Tang, Maoliang Wei, Junying Li, Jianghong Wu, Peng Zhang, Chunlei Sun, Lan Li, Hongtao Lin. Passive devices at 2 µm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited][J]. Chinese Optics Letters, 2021, 19(7): 071301

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    Paper Information

    Category: Integrated Optics

    Received: Apr. 12, 2021

    Accepted: May. 21, 2021

    Published Online: Jul. 22, 2021

    The Author Email: Hongtao Lin (hometown@zju.edu.cn)

    DOI:10.3788/COL202119.071301

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