Chinese Optics Letters, Volume. 7, Issue 6, 06489(2009)
MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications
Cited By
Article index updated: Apr. 18, 2023
Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.
The article is cited by 7 article(s) from Web of Science.
Tools
Get Citation
Copy Citation Text
Peixu Li, Ling Wang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. MOCVD growth of AlGaInP/GaInP quantum well laser diode with asymmetric cladding structure for high power applications[J]. Chinese Optics Letters, 2009, 7(6): 06489
Paper Information
Received: Sep. 22, 2008
Accepted: --
Published Online: Jun. 8, 2009
The Author Email:
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20