Infrared and Laser Engineering, Volume. 53, Issue 1, 20230487(2024)

Research on key issues of laser splitting of transparent hard and brittle materials (invited)

Shusen Zhao1,2, Hongzhi He1,3, Shifei Han1,2,4, Lu Jiang1,2,4, Jiabao Du1,2,4, Haijuan Yu1,2,4, Xuechun Lin1,2,4、*, and Guling Zhang3、*
Author Affiliations
  • 1Laboratory of All-Solid-State Light Sources, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Engineering Technology Research Center of All-Solid-State Lasers Advanced Manufacturing, Beijing 100083, China
  • 3College of Science, Minzu University of China, Beijing 100081, China
  • 4College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    Figures & Tables(15)
    (a) Schematic diagram of laser separate; (b) Nonlinear absorption and microstructure evolution during laser separate; (c) Laser spatiotemporal regulation
    Evolution of transparent hard brittle materials[4]: (a) changes in refractive index[51]; (b) nano gratings[52]; (c) nano-voids[53]; (d) crack propagation[10]
    Process of temperature change inside a silicon wafer under the action of a single pulse laser [55]
    Schematic diagram of axial propagation of spatiotemporal focused beams[58]
    Schematic diagram of adaptive optical system[59]
    Multi beam parallel femtosecond laser direct writing optical path map[66]
    Schematic diagram of cold cracking process[71]
    Physical image of wafer automatic separation equipment[72]
    Schematic diagram of a picosecond laser system for silicon carbide processing[10]
    Combining method of femtosecond laser irradiation and bandgap-selective photo-electrochemical (PEC) exfoliation [75]
    Schematic diagram of surface roughness for laser assisted splitting of different materials[71]
    Schematic diagram of the internal modification process of gallium nitride by focusing femtosecond laser through a high numerical aperture objective lens[80]
    Laser induced diamond graphitization splitting process[83]
    • Table 1. Typical transparent hard brittle material properties

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      Table 1. Typical transparent hard brittle material properties

      MaterialsMelting temperature/KBoiling temperature/KBand gap/eVMoh's hardness
      Si[11]169035401.107.0
      SiC[12-14]297037703.269.5
      GaN[15]1 97326763.409.2
      Fused silica[16-17]1 98631009.007.0
      sapphire[18]235037709.909.0
      Diamond[19-20]475051005.5010
      KDP[21-22]4516535.912.5
      YAG[23-24]222025106.508.5
      Lu2O3[25-26]276042505.807.0
      Y2O3[25, 27]269045705.608.5
    • Table 2. Main parameters of SiC ingot laser slicing equipment

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      Table 2. Main parameters of SiC ingot laser slicing equipment

      Shenzhen Han's Semiconductor Equipment Technology Co., Ltd[76]Westlake Instruments (Hangzhou) Technology Co., Ltd[78]
      Maximum cutting sizeSiC material, 8-inch downward compatibleProcessing dimensionsSiC material, 4/6/8 in
      Ingot thickness-Ingot thickness≤50 mm(customizable)
      Maximum cutting thickness5 mmSlice thickness0.1-1.2 mm
      Cutting speed400-1000 mm/sSlicing time≤30 min(6-inch continuous processing)
      Positioning accuracy±1 μmPositioning accuracy<1 μm
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    Shusen Zhao, Hongzhi He, Shifei Han, Lu Jiang, Jiabao Du, Haijuan Yu, Xuechun Lin, Guling Zhang. Research on key issues of laser splitting of transparent hard and brittle materials (invited)[J]. Infrared and Laser Engineering, 2024, 53(1): 20230487

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    Paper Information

    Category:

    Received: Aug. 25, 2023

    Accepted: --

    Published Online: Mar. 19, 2024

    The Author Email: Lin Xuechun (xclin@semi.ac.cn), Zhang Guling (glzhang@muc.edu.cn)

    DOI:10.3788/IRLA20230487

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