Acta Physica Sinica, Volume. 69, Issue 15, 157302-1(2020)

Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field

Fang Zhang1... Li-Qun Jia1, Xian-Ting Sun1, Xian-Qi Dai2, Qi-Xiang Huang3 and Wei Li3,* |Show fewer author(s)
Author Affiliations
  • 1College of Electric and Mechanical Engineering, Pingdingshan University, Pingdingshan 467000, China
  • 2College of Physics, Henan Normal University, Xinxiang 453007, China
  • 3School of Mathematics and Physics, Henan University of Urban Construction, Pingdingshan 467036, China
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    Figures & Tables(7)
    (a) Band structure of the graphene/MoS2 heterostructure calculated by this paper; (b) the band structure of the graphene/MoS2 heterostructure calculated by Ref. [38].
    Top view (a) and side view (b) of the graphene/InSe heterostructures. The gray, orange and brown balls are for C, Se and In atoms, respectively.
    (a) Projected band structure of the graphene/InSe heterostructure, where the red and blue lines represent for the energy band of graphene and InSe, respectively; (b) the band structure of graphene; (c) the band structure of monolayer InSe. The Fermi level is set to zero.
    Plane-averaged charge density difference of the graphene/InSe heterostructure. The black vertical dashed line denotes the intermediate position of graphene and InSe.
    Projected band structures of graphene/InSe heterostructures under different external electric fields. The red and blue lines represent for the energy band of graphene and InSe, respectively. The Fermi level is set to zero.
    Evolution of Schottky barriers of the graphene/InSe heterostructurer as a function of external electric field.
    (a) Plane-averaged charge density difference of the graphene/InSe heterostructure under positive external electric fields; (b) the plane-averaged charge density difference of the graphene/InSe heterostructure under negative external electric fields. The black vertical dashed line denotes the intermediate position of graphene and InSe.
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    Fang Zhang, Li-Qun Jia, Xian-Ting Sun, Xian-Qi Dai, Qi-Xiang Huang, Wei Li. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field[J]. Acta Physica Sinica, 2020, 69(15): 157302-1

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    Paper Information

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    Received: Dec. 29, 2019

    Accepted: --

    Published Online: Dec. 30, 2020

    The Author Email:

    DOI:10.7498/aps.69.20191987

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