Optics and Precision Engineering, Volume. 32, Issue 14, 2247(2024)

Ion beam polishing process parameters optimization and polishing experiment of ZnS

Gen CAI1... Beibei ZHU2, Lin QIN2, Chupeng ZHANG1 and Xiao CHEN1,* |Show fewer author(s)
Author Affiliations
  • 1Key Laboratory of Modern Manufacturing Quality Engineering in Hubei Province, Hubei University of Technology, Wuhan430068, China
  • 2Shanghai Aerospace Control Technology Institute, Shanghai01109, China
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    Figures & Tables(13)
    Ion beam polishing principle
    Remove the two-dimensional schematic diagram of the function
    Change of material removal efficiency with spatial frequency f under different removal function beam diameter
    Volume removal rate and beam diameter of different experimental groups
    Fitted removal function model
    Etching curve corresponding to the experimental results of single point etching and the sampling line
    Fitted removal function model
    Initial polygon diagram
    Measurement results of large beam diameter machining
    Measurement results of small beam diameter machining
    • Table 1. Process factor level table

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      Table 1. Process factor level table

      Process factorLevel 1Level 2Level 3Level 4
      Ion beam voltage/V8009001 0001 100
      RF power/W507090110
      Accelerating voltage/V100150200250
      Gas flow/(sccm)4567
      Working distance/mm20304050
    • Table 2. L1645 Experimental results of orthogonal table and single point etching

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      Table 2. L1645 Experimental results of orthogonal table and single point etching

      No.

      Ion beam

      voltage/V

      RF

      power/W

      Accelerating

      voltage/V

      Gas flow/

      sccm

      Working

      distance/mm

      Peak removal rate Amax/(nm/s)FWHM/mmVolumetric removal rate V/(10-4mm3/s)
      1800501004205.3627.2873.191
      2800701505307.2877.5634.672
      3800902006409.7357.7546.558
      48001102507508.9698.2676.868
      5900501506506.2336.9863.422
      6900701007407.8715.7873.035
      7900902504309.8766.2644.342
      89001102005208.5757.9146.017
      91 000502007309.4238.7228.032
      101 000702506209.4886.6894.756
      111 000901005508.8787.3825.421
      121 00011015044010.7887.5486.886
      131 100502505409.8768.2577.544
      141 1007020045012.0228.95410.811
      151 1009015072010.1329.74310.776
      161 10011010063010.8439.21410.323
    • Table 3. Volumetric removal rate very poor analysis results

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      Table 3. Volumetric removal rate very poor analysis results

      Experimental factorsk1k2k3k4Range
      A5.3224.2046.2739.8635.659
      B5.5475.8186.7747.5231.976
      C5.4926.4397.8545.8772.362
      D6.3075.9136.2697.1771.264
      E6.1856.8426.0056.6300.837
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    Gen CAI, Beibei ZHU, Lin QIN, Chupeng ZHANG, Xiao CHEN. Ion beam polishing process parameters optimization and polishing experiment of ZnS[J]. Optics and Precision Engineering, 2024, 32(14): 2247

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    Paper Information

    Category:

    Received: Feb. 26, 2024

    Accepted: --

    Published Online: Sep. 27, 2024

    The Author Email: CHEN Xiao (chenxiao1987jz@163.com)

    DOI:10.37188/OPE.20243214.2247

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