Chinese Journal of Quantum Electronics, Volume. 19, Issue 5, 467(2002)

Doping of Zn into InP Induced by YAG Continuous Wave Laser

[in Chinese]1... [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1 and [in Chinese]2 |Show fewer author(s)
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  • 1[in Chinese]
  • 2K.KashkarovDepartment of Physics, Moscow University Russia 119899
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    References(5)

    [1] [1] Slaoui A, Foulon F, Siffert P. Excimer laser induced doping of phosphorus into silicon. J. Appl. Phys., 1990, 67(10):6197

    [2] [2] Foulon F, Slaoui A, Fogarassy E et al. Optimization of parameters involved in the photochemical doping of Si with a pulsed ArF excimer laser [J]. Appl. Surf. Sci., 1989, 36:384

    [3] [3] Ehrlich D J, Tao J Y. Submicrometer-linewidth doping and relief definition in silicon by laser-controlled diffusion [J]. Appl. Phys. Left., 1982, 41(3): 297

    [4] [4] Baeri P, Campisano S U, Foti G et al. Arsenic diffusion in silicon melted by high-power nano-second laser pulsing [J]. Appl. Phys. Lett., 1978, 33(2): 137

    [5] [5] Fokumura K S, Kaneka S. Excimer-laser doping into Si thin films [J]. J. Appl. Phys., 1990, 67(5): 2359

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Doping of Zn into InP Induced by YAG Continuous Wave Laser[J]. Chinese Journal of Quantum Electronics, 2002, 19(5): 467

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    Paper Information

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    Received: Sep. 26, 2001

    Accepted: --

    Published Online: May. 15, 2006

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