Nd:YAG continuous laser was used to irradiate the n-InP substrates which wore vapoured Zn film on the samples surface. The doping of Zn into InP was achieved by the method of Nd: YAG continuous laser inducing doping, and the PN junctions were obtained. The samples, which were irradiated, were studied with an Electrochemical C-V profiler and Scanning Electron Microscope (SEM). The relation of performance parameters of PN junctions such as the depth of the junctions, the distribution of the doping concentration and the irradiation time, the irradiation power are presented . The experimental results show that the acceptor concentration of uniform distribution, shallow junction (-1 μm), and heavy doping concentration is attained (-1019cm-3). The primary mechanism of Zn doping is assumed that alloy junctions came to being with the laser irradiating.