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Chinese Physics B, Volume. 29, Issue 8, (2020)

Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Sheng Hu1, Ling Yang1、†, Min-Han Mi2, Bin Hou2, Sheng Liu3, Meng Zhang1, Mei Wu2, Qing Zhu1, Sheng Wu2, Yang Lu2, Jie-Jie Zhu1, Xiao-Wei Zhou1, Ling Lv1, Xiao-Hua Ma2, and Yue Hao2
Author Affiliations
  • 1State Key Discipline Laboratory of Wide Band-gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 7007, China
  • 2School of Microelectronics, Xidian University, Xi’an 710071, China
  • 3Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China
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    Schematic cross-section of fabricated (a) SH:C and (b) DH:Si/C HEMT. Energy band diagram and electron distribution of (c) SH:C and (d) DH:Si/C.

    Fig. 1. Schematic cross-section of fabricated (a) SH:C and (b) DH:Si/C HEMT. Energy band diagram and electron distribution of (c) SH:C and (d) DH:Si/C.

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    C–V characteristics of (a) SH:C and (b) DH:Si/C with temperature increasing from 300 K to 500 K.

    Fig. 2. C–V characteristics of (a) SH:C and (b) DH:Si/C with temperature increasing from 300 K to 500 K.

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    Capacitance–voltage (C–V) characteristics calculated the approximate charge density profiles of (a) SH:C and (b) DH:Si/C at different temperatures.

    Fig. 3. Capacitance–voltage (C–V) characteristics calculated the approximate charge density profiles of (a) SH:C and (b) DH:Si/C at different temperatures.

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    Plots of conductance versus radial frequency for SH:C at (a) 300 K and (b) 500 K for some selected gate voltages, respectively.

    Fig. 4. Plots of conductance versus radial frequency for SH:C at (a) 300 K and (b) 500 K for some selected gate voltages, respectively.

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    Plots of conductance versus radial frequency for DH:Si/C at (a) 300 K and (b) 500 K for some selected low gate voltages, and plots of conductance versus radial frequency at (c) 300 K and (d) 500 K for DH:Si/C at some selected high gate voltages.

    Fig. 5. Plots of conductance versus radial frequency for DH:Si/C at (a) 300 K and (b) 500 K for some selected low gate voltages, and plots of conductance versus radial frequency at (c) 300 K and (d) 500 K for DH:Si/C at some selected high gate voltages.

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    Plots of (a) time constant of trap state versus gate voltage and (b) trap state density versus trap state energy of SH:C and DH:Si/C.

    Fig. 6. Plots of (a) time constant of trap state versus gate voltage and (b) trap state density versus trap state energy of SH:C and DH:Si/C.

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    Sheng Hu, Ling Yang, Min-Han Mi, Bin Hou, Sheng Liu, Meng Zhang, Mei Wu, Qing Zhu, Sheng Wu, Yang Lu, Jie-Jie Zhu, Xiao-Wei Zhou, Ling Lv, Xiao-Hua Ma, Yue Hao. Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures[J]. Chinese Physics B, 2020, 29(8):

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    Paper Information

    Received: Mar. 13, 2020

    Accepted: --

    Published Online: Apr. 29, 2021

    The Author Email: Yang Ling (yangling@xidian.edu.cn)

    DOI:10.1088/1674-1056/ab96a4

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    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology