High Power Laser and Particle Beams, Volume. 32, Issue 2, 025015(2020)

A parameter optimization method of snubber circuit of thyristor under pulse current working condition

Wei Tong1...1,2,2, Hua Li1,1, Peng Fu1,1, Kun Wang1,1,2,2, Ul Hassan Mahmood1,1, and Zhiquan Song11,* |Show fewer author(s)
Author Affiliations
  • 1Institute of Plasma Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 2Science Island Branch, University of Science and Technology of China, Hefei 230026, China
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    Figures & Tables(13)
    Simplified commutation diagram of quench protection system (QPS)
    Exponential function model指数型模型波形图
    Test circuit for thyristor reverse recovery characteristic脉冲工况下晶闸管测试实验电路图
    Equivalent circuit diagram of snubber circuit during the reverse recovery process
    Peak value of Vdmax under various set of Rs and Cs.
    Peak value of dVd/dt under various set of Rs and Cs
    Peak value of dVd/dt as a function of Rs
    Peak value of Vd as a function of Rs and Cs
    Comparison of reverse recovery current and voltage waveforms
    • Table 1. Specific characteristics of thyristor during reverse recovery process

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      Table 1. Specific characteristics of thyristor during reverse recovery process

      charge voltage/VIp/A IRM/A di/dt/ (A·µs−1) Qrr/µC
      1 0006 62289537.108 057.3
      1 5009 93596750.968 412.8
      2 00013 2501 10076.549 049.2
      2 50016 5601 20697.419 568.7
      3 00019 8801 330121.2210 153.0
      3 50023 1901 402135.9710 505.4
      4 00026 5001 523160.2611 076.2
      4 50029 8101 627179.4411 517.1
      5 00033 1601 738198.9811 962.4
      5 50036 4801 846221.8812 471.5
      6 00039 7901 915238.7612 849.6
      6 50043 0902 014256.9013 244.7
      7 00046 3802 132279.0113 715.9
      7 50049 8802 230298.3714 122.1
    • Table 2. Design specification of RC snubber circuit for QPS in LSTF

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      Table 2. Design specification of RC snubber circuit for QPS in LSTF

      symbolparametervalue
      L/µH external inductance25
      VdRM, VRRM/V max. repetitive peak forward and reverse blocking voltage of chosen thyristor5 200
      dVd/dtcrit/(V·µs-1) critical rate of rise of commutating voltage of chosen thyristor(di/dt=500 A/µs, Tvj=125 ℃) 3 000
      IRM/A peak value of reverse recovery current (di/dt=500 A/µs, Tvj=125 ℃) 1 825.7
      NSthyristor series number2
    • Table 3. The optimum Rs, Cs and corresponding circuit parameters

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      Table 3. The optimum Rs, Cs and corresponding circuit parameters

      symbolparametervalue
      RsSnubber Resistance11.3
      Cs/μF Snubber Capacitance0.8
      Vdmax/V Maximum Reverse Recovery Voltage6 210
      (dVd/dt)max/(V·μs−1) Maximum Vd change rate 3 600
    • Table 4. Comparison of electrical parameters

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      Table 4. Comparison of electrical parameters

      optimum parametersPractical parameters
      IRM /A) 1 8151 835
      (di/dt)0/(A·s-1) 309×106307×106
      vdmax/V 6 1686 960
      (dVd/dt)max /(V·µs-1) 3 5986 285
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    Wei Tong, Hua Li, Peng Fu, Kun Wang, Ul Hassan Mahmood, Zhiquan Song. A parameter optimization method of snubber circuit of thyristor under pulse current working condition[J]. High Power Laser and Particle Beams, 2020, 32(2): 025015

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    Paper Information

    Received: Jul. 31, 2019

    Accepted: --

    Published Online: Mar. 18, 2020

    The Author Email: Song Zhiquan (zhquansong@ipp.ac.cn)

    DOI:10.11884/HPLPB202032.190280

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