Microelectronics, Volume. 53, Issue 4, 723(2023)
A HEMT Device with P-GaN Gate Bonded Hybrid Cap Layer Structure
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ZHOU Min, FENG Quanyuan, WEN Yan, CHEN Xiaopei. A HEMT Device with P-GaN Gate Bonded Hybrid Cap Layer Structure[J]. Microelectronics, 2023, 53(4): 723
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Received: Oct. 29, 2022
Accepted: --
Published Online: Jan. 3, 2024
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