Fig. 1. Field intensity distribution and transverse component intensity of radially and azimuthally polarized light focusing area

Fig. 2. Schematic of experimental setup

Fig. 3. Schematic diagram of the relationship between silicon crystal coordinate system and laboratory coordinate system

Fig. 4. Raman signal intensity curve corresponding to each mode theoretically calculated by rotating silicon (1 1 0) wafer sample when the incident light is azimuthal polarization, radial polarization and longitudinal polarization, and the detection part is polarization 理论上入射光为角向偏振、径向偏振和纵向偏振，探测部分为 偏振，旋转Si(1 1 0)样品计算得到的各模式对应的拉曼信号强度曲线图

Fig. 5. Raman signal intensity curves obtained by rotating Si(1 1 0) wafer samples with azimuthal polarization and radial polarization of incident light and polarization of detection part. The longitudinally polarized light is actually calculated by radial polarization minus 0.526 times azimuthal polarization 入射光为角向偏振和径向偏振，探测部分为 偏振，旋转Si(1 1 0)样品实验得到的拉曼信号强度曲线（纵向偏振光曲线为径向偏振−0.526×角向偏振实际计算得到）