[1] [1] Liu Hui, Feng Liu, Zhang Liandong, et al. Stability of GaAs photocathode activation[J]. Infrared and Laser Engineering, 2014, 43(4): 1222-1225. (in Chinese)

[2] [2] Du Xiaoqing, Chang Benkang, Wang Guihua, et al. (Cs, O) activation technique for NEA photocathode [J]. Acta Photonica Sinica, 2003, 32(7): 826-829. (in Chinese)

[3] [3] Li Xiaofeng, Feng Liu, Shi Feng, et al. XPS analysis on multi alkali photocathode[J]. Infrared and Laser Engineering, 2014, 43(6): 1857-1862. (in Chinese)

[4] [4] Liu Dafu, Huang Yangcheng, Wu Ligang, et al. Property analysis of window sorbate of infrared detector working at ultralow temperature in ultravacuum[J]. Infrared and Laser Engineering, 2005, 34(1): 11-14. (in Chinese)

[5] [5] Wang C S, Klein B M. First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe. I. Self-consistent energy bands, charge densities, and effective masses[J]. Phys Rev B, 1981, 24(6): 3393-3416.

[6] [6] Najwa Anua N, Ahmed R, Saeed M A, et al. DFT investigations of structural and electronic properties of gallium arsenide(GaAs)[C]//AIP Conference Proceedings, 2012, 1482: 64-68.

[7] [7] Qiu Sichou. Physics of Semiconductor Surface and Interfaces[M]. Wuhan: Huazhong University of Technology Press, 1995: 29. (in Chinese)

[8] [8] Jork Hebenstreit, Martina Heinemann, Matthias Scheffler. Atomic and electronic structures of GaAs(110) and their akali-adsorption-induced changes[J]. Physical Review Letters, 1991, 67(8): 1031-1034.

[9] [9] Jia Xinzhi. Negative Electron Affinity Photocathodes and Applications[M]. Beijing: National Defense Industry Press,2013: 67. (in Chinese)

[10] [10] Gao Huairong. Investigation of the mechanism of the activation of GaAs negative electron affinity photocathodes[J]. J Vac Sci Technol A, 1987, 5(4): 1295-1298.