[1] [1] Tsang W T. Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular-beam epitaxy. Appl. Phys. Lett., 1981, 39(7):786～788

[2] [2] Kasemset D, Hong C S, Patel N B et al.. Graded barrier single quantum well lasers-theory and experiment. IEEE J. Quant. Electron., 1983, 19(4):1025～1030

[3] [3] Sugimura A. Threshold current for AlGaAs quantum well lasers. IEEE J. Quant. Electron., 1984, 20(2):336～343

[4] [4] Derry P L, Chen T R, Zhuang Y H et al.. Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al, Ga) As lasers. Appl. Phys. Lett., 1988, 53(4):271～273

[5] [5] Arakawa Y, Sakaki H. Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett., 1982, 40(8):939～941

[6] [6] Arakawa Y, Yakir A. Quantum well lasers-gain, spectra, dynamics. IEEE J. Quant. Electron., 1986, QE-22(7):1887～1899

[7] [7] Uomi K, Mishima T, Chinone N. Ultrahigh relaxation oscillation freguency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers. Appl. Phys. Lett., 1987, 51(1):78～80

[8] [8] Ishikawa H. Theoretical gain of strained quantum well grown on an InGaAs ternary substrate. Appl. Phys. Lett., 1993, 63(6):712～714

[9] [9] Li Z, Dzurko K M, Delage A, Mclister S P. A self-consistent two-dimensional model of quantum-well semiconductor lasers: optimization of a GRIN-SCH SQW laser structure. IEEE J. Quant. Electron., 1992, 28(4):792～803