Strained InGaAs/AlGaAs Double Quantum Well Laser with GRIN-SCH

[in Chinese]; [in Chinese]; [in Chinese]

Acta Optica Sinica, Volume. 19, Issue 8, 1084(1999)

[in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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Strained InGaAs/AlGaAs double quantum well lasers with two pairs of graded index (GRIN) heterostructure have been fabricated by MOCVD method. Its wavelength ranges from 970 to 982 nm, threshold current density is 140 A/cm2 at room temperature CW operation. 520 mW/facet and 1.49 W/facet for CW output optical power has been obtained under 0.9 A and 2.0 A operation, respectively. The maximum CW output optical power can come up to 2.4 W/facet.

Keywords

double quantum wells graded index laser separate confinement heterostructure (SCH)strained layer

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[in Chinese], [in Chinese], [in Chinese]. Strained InGaAs/AlGaAs Double Quantum Well Laser with GRIN-SCH[J]. Acta Optica Sinica, 1999, 19(8): 1084

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