Fig. 1. The effective minority carries lifetime and iV_oc of inip samples with various hydrofluoric acid treatment time. inip结构样品的少子寿命与iV_oc随HF处理时间的变化　　　　

Fig. 2. The effective minority carrier lifetimes and iV_oc of inip samples with different H₂ flow rates for hydrogen pretreatment. inip结构样品的少子寿命与iV_oc随等离子体处理过程H₂流量的变化

Fig. 3. Effective minori ty carrier lifetime and iV_oc of inip samples with different H₂ and SiH₄ flow rates. 三组不同钝化条件下, 对应inip结构样品的少子寿命与iV_oc

Fig. 4. Effective minority carrier lifetime and iV_oc of inip samples with different deposition time of passivation layer. 不同钝化层沉积时间对应inip结构样品的少子寿命与iV_oc

Fig. 5. Effective minority carrier lifetime and iV_oc of inip samples with hydrogen-rich plasma treatment on I/P interfaces and different H₂ pretreatment on c-Si surfaces. 采用I/P界面富氢处理以及c-Si表面不同氢预处理时间对应inip结构样品的少子寿命与iV_oc

Fig. 6. Light absorption spectra of P-type layers with different H₂ flow rates (cut-off absorption wavelength, optical bandgap, thickness, dark conductivity of these layers were included in the inserted table). 不同H₂流量下制备的P型掺杂层的光吸收曲线(图中表格给出对应的截止吸收波长、光学带隙、厚度、暗态电导率)

Fig. 7. The effective minority carrier lifetime and iV_oc of inip samples with different P-type buffer layers and hydrogen-rich plasma treatments (1# without P-type buffer layer; 2# P-type amorphous silicon as the buffer layer; 3# P-type microcrystalline silicon as the buffer layer; 4# increasing the flow of rich hydrogen treatment of H₂, P-type microcrystalline silicon as the buffer layer)(The deposition time of passivation layer is 40 and 35 s in yellow and white areas, respectively). 不同P型缓冲层及富氢等离子体处理微调下, 对应inip结构样品的少子寿命与iV_oc(1# 无P型缓冲层; 2# P型非晶硅作为缓冲层; 3# P型微晶硅作为缓冲层; 4# 增加富氢处理的H₂流量, P型微晶硅作为缓冲层)(黄色、白色区域钝化层沉积分别为40 和35 s)

Fig. 8. (a) and (b) device-structure, (c) effective minority carrier lifetime and iV_oc, (d) J-V characteristics and EQE of planar a-Si:H/c-Si heterojunction cells with (without) passivation improvement. 采用未经钝化改善和钝化改善后的工艺条件制备平面a-Si:H/c-Si异质结太阳电池　(a)和(b)为电池结构示意图; (c)少子寿命与iV_oc; (d) J-V特性与EQE

Fig. 9. (a) J-V characteristics and (b) EQE of perovskite/silicon heterojunction tandem solar cell. 钙钛矿/硅异质结叠层太阳电池　(a) J-V曲线; (b)EQE曲线