Journal of Semiconductors, Volume. 45, Issue 10, 100401(2024)
Use of the epitaxial MTBs as a 1D gate (Lg = 0.4 nm) for the construction of scaling down two-dimensional field-effect transistors
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![(Color online) Schematics of FETs with MoS2 MTBs as 1D local gates. A gate stack consisting of MTB and an Al2O3 dielectric layer (5 nm thick, deposited via electron-beam evaporation) was positioned beneath a single-crystal MoS2 monolayer channel (approximately 600 nm in length), which was connected to bismuth source (S) and drain (D) contacts to establish an ohmic contact[4].](/Images/icon/loading.gif){kind=icon}
Fig. 1. (Color online) Schematics of FETs with MoS2 MTBs as 1D local gates. A gate stack consisting of MTB and an Al2O3 dielectric layer (5 nm thick, deposited via electron-beam evaporation) was positioned beneath a single-crystal MoS2 monolayer channel (approximately 600 nm in length), which was connected to bismuth source (S) and drain (D) contacts to establish an ohmic contact[4].
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Youla Yang, Daixuan Wu, He Tian, Tian-Ling Ren. Use of the epitaxial MTBs as a 1D gate (Lg = 0.4 nm) for the construction of scaling down two-dimensional field-effect transistors[J]. Journal of Semiconductors, 2024, 45(10): 100401
Paper Information
Category: Research Articles
Received: Jul. 15, 2024
Accepted: --
Published Online: Dec. 5, 2024
The Author Email: Wu Daixuan (DXWu), Tian He (HTian), Ren Tian-Ling (TLRen)
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