[6] [6] ZHAO Yuanfu,ZHENG Hongchao,FAN Long,et al. Experimental research on transient radiation effects in microprocessors based on SPARC-V8 architecture[J]. Journal of Semiconductors, 2015,36(11):64-68.

[8] [8] WIRTH J L,ROGERS S C. The transient response of transistors and diodes to ionizing radiation[J]. IEEE Transactions on Nuclear Science, 1964,11(5):24-38.

[9] [9] ELLIS T D,KIM Y D. Use of a pulsed laser as an aid to transient upset testing of I2L LSI microcircuits[J]. IEEE Transactions on Nuclear Science, 1978,25(6):1489-1493.

[10] [10] SKOROBOGATOV P K,NIKIFOROV A Y,EGOROV A N,et al. Wavelength influence on CMOS SOS IC dose rate laser simulation efficiency[C]// 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS). Oxford,United Kingdom:IEEE, 2013:435-437.

[11] [11] NIKIFOROV A Y,SKOROBOGATOV P K. Physical principles of laser simulation for the transient radiation response of semiconductor structures, active circuit elements, and circuits:a nonlinear model[J]. Russian Microelectronics, 2006,35(3): 138-149.

[12] [12] LEE N H,OH S C,JEONG S H,et al. Analysis of the transient radiation damage effects on electronics using irradiation experiment and model simulation[C]// Nuclear Science Symposium and Medical Imaging Conference(2013 NSS/MIC). Seoul,Korea:IEEE, 2013:1-3.

[13] [13] FJELDLY T A,DENG Y,SHUR M S,et al. Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices[J]. IEEE Transactions on Nuclear Science, 2001,48(5):1721-1730.

[15] [15] ISHAQUE A N,HOWARD J W,BECKER M,et al. Photocurrent modeling at high dose rates[J]. IEEE Transactions on Nuclear Science, 1989,36(6):2092-2098.