Infrared and Laser Engineering, Volume. 36, Issue 4, 450(2007)

Optical properties of Hg1-xMnxTe

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    References(10)

    [1] [1] BECLA P.Infrared photovoltaic detectors utilizing Hg1-xMnxTe and Hg1-xCdxTe alloys[J].J Vac Sci Technol,1986,4(4):2014-2018.

    [2] [2] TRIBOULET A.Alternative small gap materials for IR detection[J].Semicond Sci Technol,1990,5:1073-1079

    [3] [3] PANKOV J I.Optical Processes in Semiconductors[M].New Jersey:Prentice-hall Inc,1971.

    [4] [4] BLUE M D.Optical absorption in HgTe and HgCdTe[J].Phys Rev,1964,134:226-234.

    [5] [5] KANA E O.Band structure of indium antimanide[J].J Phys Chem Solids,1957,1:249-261.

    [6] [6] BARANSKY P I,BELYAGEV A E,BODNARUK O O,et al.Transport phenomena and recombination in Hg1-xMnxTe alloys (x~0.1)[J].Semiconductors,1990,24:1490-1493.

    [7] [7] MOSS T S,BURRELL G J,ELLIS B.Semiconductor Optoelectronics[M].London:Butterworth CoPublishers,1973.

    [8] [8] VLASENKO A I,VLASENKO Z K,LYUBCHENKO A V.Photoconducitivity spectra of CdHgTe crystals with photoactive inclusions[J].Semiconductors,1999,33(1):47-51.

    [9] [9] PIOTR OWSKI T.Photoluminescence studies of Hg1-xMnxTe crystals[J].Acta Physica Polonia,1990,77(1):195-198.

    [10] [10] ROGLSKI A.The performance of Hg1-xMnxTe photodiodes[J].Infrared Phys,1991,31(2):117-166.

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    [in Chinese], [in Chinese], [in Chinese]. Optical properties of Hg1-xMnxTe[J]. Infrared and Laser Engineering, 2007, 36(4): 450

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    Paper Information

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    Received: Aug. 18, 2006

    Accepted: Oct. 10, 2006

    Published Online: Feb. 18, 2008

    The Author Email: (史向华(1963-)女湖南长沙人教授从事半导体薄膜材料研)

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