Infrared and Laser Engineering, Volume. 52, Issue 3, 20230036(2023)
Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited)
Fig. 1. (a) Relationship between impact ionization coefficient ratio and Cd component
Fig. 3. (a) Diagram of HgCdTe SAM-APD structure; (b) Epitaxial structure of HgCdTe SAM-APD grown by molecular-beam epitaxy
Fig. 5. (a) Multiple acquisitions showing detection of 0, 1 and 2 photons with average illumination of one photon; (b) Single photon acquisition with double pulses closely spaced time (<6 ns) without afterpulsing observed
Fig. 7. 2×8 linear middle wave HgCdTe APD photon counting focal plane array
Fig. 9. HgCdTe e-APD gain curves measured at
Fig. 10. Probability distributions for detecting 1 and 2 photons events and uniformly distributed dark current generation in the multi-plication layer
Fig. 11. Illustration of a fast response HgCdTe APD architecture with separate absorption and multiplicaiton layer, the corresponding band gap variation
Fig. 12. (a) Structure schematic and (b) band structure of MOVPE heterostructure HgCdTe APD array
Fig. 15. Performances of MWIR HgCdTe APD at 80 K. (a) Photocurrent, dark current and gain; (b) Variation of excess noise factor
Fig. 16. Imaging demonstration of a HgCdTe APD focal plane under different gains with
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Huijun Guo, Lu Chen, Liao Yang, Chuan Shen, Hao Xie, Chun Lin, Ruijun Ding, Li He. Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited)[J]. Infrared and Laser Engineering, 2023, 52(3): 20230036
Category: Special issue-Advances in single-photon detection technology
Received: Jan. 29, 2023
Accepted: --
Published Online: Apr. 12, 2023
The Author Email: Chen Lu (chenlu@mail.sitp.ac.cn)