Infrared and Laser Engineering, Volume. 52, Issue 3, 20230036(2023)

Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited)

Huijun Guo1, Lu Chen1、*, Liao Yang1, Chuan Shen1, Hao Xie1, Chun Lin1,2, Ruijun Ding1,2, and Li He1,2
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
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    Figures & Tables(23)
    (a) Relationship between impact ionization coefficient ratio and Cd component x of HgCdTe materials; (b) Comparison of excess noise factor F for various APD materials
    Diagram layout of photon counting system
    (a) Diagram of HgCdTe SAM-APD structure; (b) Epitaxial structure of HgCdTe SAM-APD grown by molecular-beam epitaxy
    HgCdTe APD 4×4 photon counting sensor chip assembly
    (a) Multiple acquisitions showing detection of 0, 1 and 2 photons with average illumination of one photon; (b) Single photon acquisition with double pulses closely spaced time (<6 ns) without afterpulsing observed
    Cross section and top view of HDVIP HgCdTe APD structure
    2×8 linear middle wave HgCdTe APD photon counting focal plane array
    Schematic diagram of planar PIN HgCdTe APD structure
    HgCdTe e-APD gain curves measured at T=80 K for λc=2.9 μm to 5.3 μm
    Probability distributions for detecting 1 and 2 photons events and uniformly distributed dark current generation in the multi-plication layer
    Illustration of a fast response HgCdTe APD architecture with separate absorption and multiplicaiton layer, the corresponding band gap variation
    (a) Structure schematic and (b) band structure of MOVPE heterostructure HgCdTe APD array
    C-RED ONE camera
    Installation of C-RED ONE at MIRC optics
    Performances of MWIR HgCdTe APD at 80 K. (a) Photocurrent, dark current and gain; (b) Variation of excess noise factor F with gain M; (c) Noise equivalent photon (NEPh) compared with DRS HgCdTe APD detectors; (d) Bandwidth
    Imaging demonstration of a HgCdTe APD focal plane under different gains with Tint=20 μs. (a) M=1; (b) M=19
    • Table 1. Comparison of linear and Geiger mode technology

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      Table 1. Comparison of linear and Geiger mode technology

      ParametersLinear modeGeiger mode
      备注:(1) 由于后脉冲的捕获和再发射大量载流子导致的死时间限制了脉冲间隔分辨率。    (2) 多脉冲盖革统计能达到10 cm的距离分辨率。    (3) 通过多次事件符合过滤可以区分倍增的光子信号和倍增的体暗电流。
      Able to sense single photon eventYesYes
      Single event dynamic range>1000∶11 photon same as 2 or 1000
      APD gain>60105-106
      ROIC front endHigh gain, low noiseLow gain, high noise
      Repetitive pulse resolution1-2 ns100-1000 ns(1)
      Optical crosstalkMinimalSignificant radiative recombination of a large number of carriers
      Range resolution (pulse-to-pulse)~20 cm1500-15000 cm(2)
      Discriminate gained signal from ungained surface dark currentYes, by thresholdingYes, by thresholding
      Discriminate gained signal from gained radiation (γ, p) Yes, by amplitudeNo, Can’t discriminate with single pulses(3)
      Discriminate gained “few” photon signal from gained bulk IdarkYes, by amplitudeNo, can’t discriminate with single pulses returns(3)
      Photon detection efficiencyOptical QE>90%Geiger efficiency ~30%– 50%
    • Table 2. Performance of HgCdTe APD 4×4 photon counting sensor chip assembly

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      Table 2. Performance of HgCdTe APD 4×4 photon counting sensor chip assembly

      ParametersResults
      Response waveband1.55 μm
      Operating voltages<20 V
      Operating temperature80-180 K or greater
      Maximum gain200-350
      Dark count rate (DCR) (counts/s) at M>100 <104(80-160 K) , <10 5 (180 K)
      Surface dark current<10−13A
      Max reset time10 ms
      Operability>90%
      Probability of detection>95%
      False alarm rate<1%
    • Table 3. Comparison of performance of 2×8 linear HgCdTe APDs photon counting arrays in 2010 and 2013

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      Table 3. Comparison of performance of 2×8 linear HgCdTe APDs photon counting arrays in 2010 and 2013

      ParametersArray in 2010Two arrays in 2013
      A8327-8-2A8327-14-1
      P-type dopingVHgCu+VHgVHg
      Cd composition0.330.330.33
      Gain470@ 13 V 1910@12.9 V1100@12.9 V
      Maximum Photon Detection Efficiency(PDE)50%@14 V72%@12.9 V66%@12.9 V
      FER@PDE=50%>1 MHz151 kHz158 kHz
      Mean single photon SNR13.721.912.3
      Excess noise factor, F1.3-1.41.251.20
      Measured RMS jitter632 ps2370 ps1570 ps
      Minimum time between events8 nsNo measured9 ns
    • Table 4. Typical performance of SWIR and MWIR Hg-CdTe APDs at T= 80 K

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      Table 4. Typical performance of SWIR and MWIR Hg-CdTe APDs at T= 80 K

      ParametersSWIRMWIR
      Quantum efficiency (QE)60%-80%
      Max gain2 00013000
      Bias at M=100 12-14 V7-10 V
      F1.1-1.4
      QE to F ratios 40%-70%
      Typical response time0.5-20 ns
      Maximum gain-bandwidth product2.1 THz
    • Table 5. HgCdTe APD performance index for space lidar application

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      Table 5. HgCdTe APD performance index for space lidar application

      ParametersObjetive
      Response waveband0.3-3 μm
      F1.2
      Quantum efficiency (QE)90%
      Temporal resolution5 ns-10 μs
      Photon noise limited dynamic range60 dB
      Detector noise<1 photon
      Minimum detected photon noise limited signal<1 photon
    • Table 6. C- RED ONE camera performances

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      Table 6. C- RED ONE camera performances

      ParametersResults
      Maximum frame frequency3500 fps
      Mean dark + readout noise at 3500 fps and Gain~30 < 1 e
      Quantization16 bit
      Operating temperature80 K
      Peak quantum efficiency from 0.8 μm to 2.5 μm> 70%
      Operability99.30%
      Image full well capacity at gain 1, 3500 fps50000 e
      F< 1.25
    • Table 7. Performances of HgCdTe APD for photon-counting application from different research institutes

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      Table 7. Performances of HgCdTe APD for photon-counting application from different research institutes

      ParametersRaytheonDRSCEA/TETILeonardoSITPKIP
      Able to sense single photon eventYesYesYesYesNoNo
      APD structureSAMHDVIPPINSAMPINPIN
      Epitaxial techniqueMBELPEMBE/LPEMOVPELPELPE
      Cut-off wavelength @77 K1.55 μm at absorption region, 1.27 μm at gain region4.3 μm2.5-5.3 μm2.5 μm at absorption region, 3.5 μm at gain region4.7-5.2 μm4.6 μm
      Multiplication mechanismHole multiplicationElectron multiplicationElectron multiplicationElectron multiplicationElectron multiplicationElectron multiplication
      Maximum gain35061002 000 for SW 13000 for MW 66@14.5 V>1000>1000
      FF~1 1.21.1-1.4< 1.25<1.5@M<400 <1.5@<8.5 V
      Bandwidth (BW)1-3 GHz of ROIC BWNo givenMax BW 10 GHz@M=1 300 K No given, low BW300-600 MHzNo reported
      Dark count rate (DCR)<10 kHz(80-160 K); <100 kHz (180 K) <20 kHz100 kHz for SW 1 MHz for MW 21 Hz/pixelCalculated by dark current: 100 kHz-3 GHzCalculated by dark current: 560 kHz-170 MHz
      Photon detection efficiency (PDE)>95%72%~90%>90%No reportedNo reported
      Minimum time between events<6 ns8 ns5 ns-10 μs125 μsNo reportedNo reported
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    Huijun Guo, Lu Chen, Liao Yang, Chuan Shen, Hao Xie, Chun Lin, Ruijun Ding, Li He. Linear-mode HgCdTe avalanche photodiode detectors for photon-counting applications (invited)[J]. Infrared and Laser Engineering, 2023, 52(3): 20230036

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    Paper Information

    Category: Special issue-Advances in single-photon detection technology

    Received: Jan. 29, 2023

    Accepted: --

    Published Online: Apr. 12, 2023

    The Author Email: Chen Lu (chenlu@mail.sitp.ac.cn)

    DOI:10.3788/IRLA20230036

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