Effects of gain nonlinearities in an optically injected gain lever semiconductor laser

J. M. Sarraute; K. Schires; S. LaRochelle; F. Grillot

doi:10.1364/PRJ.5.000315

Photonics Research, Volume. 5, Issue 4, 315(2017)

Effects of gain nonlinearities in an optically injected gain lever semiconductor laser On the Cover

J. M. Sarraute^1,2、*, K. Schires¹, S. LaRochelle², and F. Grillot^1,3

Author Affiliations

¹LTCI, Télécom Paristech, Université Paris-Saclay, 46 rue Barrault, 75013 Paris, France

²COPL, Université Laval, 2375 rue de la Terrasse, Québec, Québec G1V 06A, Canada

³Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106-4343, USA

show less

Figures & Tables(6)

Fig. 1. (a) Schematic of the two-section GL laser (framed by black dotted square). Evolution of the material gain with the carrier density in both sections (left). Ga,b′ are the differential gains in each section. (b) Schematic of the OIL configuration.

Download full size

View in Article

Fig. 2. MTF of the free-running laser without GL calculated from 5 for ϵ=0,5×10−17,10−16,and 5×10−16 cm3.

Download full size

View in Article

Fig. 3. MTF of the OIGL laser calculated from 3 for different values of gain compression ϵ=0,10−17,5×10−17,and 10−16 cm3 and with a GL of g=10. The injected power and frequency detuning are (a) K=3.5,Δf/fR=0.97 and (b) K=8,Δf/fR=3.3. Red dotted curves represent the MTF for the free-running case assuming no compression and without GL.

Download full size

View in Article

Fig. 4. 3 dB bandwidth in the stable-locking region of the OIGL laser with g=10 and ϵ=10−16 cm3.

Download full size

View in Article

Fig. 5. Evolution of the 3 dB bandwidth with respect to GL strength and gain compression factor for (a) K=0 and (b) K=8.

Download full size

View in Article

Table 1. Material and Laser Parameters

View table

View in Article

Table 1. Material and Laser Parameters

Simulation parameters	Symbols	Value
Cavity volume	$V$	$2 \times 10^{- 17} m^{3}$
Bias current	$I_{a / b}$	$18 / 1.8 mA$
Steady-state optical gain	$G_{0, b}$	$1.8 \times 10^{13} s^{- 1}$
Optical confinement	$Γ$	0.032
Transparency carrier density	$N_{tr}$	$1.8 \times 10^{24} m^{- 3}$
Fitting parameter	$N_{s}$	$- 0.4 \times 10^{24} m^{- 3}$
Carrier lifetime	$τ_{c}$	$1.57 \times 10^{- 9} s$
Photon lifetime	$τ_{p}$	$2.77 \times 10^{- 12} s$
Linewidth enhancement factor	$α_{H}$	2
Coupling S-M factor	$k_{c}$	$1 \times 10^{11} s^{- 1}$
Damping rate ratio	$g$	1.15–10
Injection strength	$K$	−15 to +10 dB
Gain compression factor	$ϵ$	$0 - 5 \times 10^{- 16} {cm}^{3}$
Spontaneous emission factor	$β$	$10^{- 5}$

Tools

Get Citation

Copy Citation Text

J. M. Sarraute, K. Schires, S. LaRochelle, F. Grillot. Effects of gain nonlinearities in an optically injected gain lever semiconductor laser[J]. Photonics Research, 2017, 5(4): 315

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Lasers and Laser Optics

Received: Feb. 8, 2017

Accepted: Apr. 15, 2017

Published Online: Oct. 10, 2018

The Author Email: J. M. Sarraute (jean-maxime.sarraute.1@ulaval.ca)

DOI:10.1364/PRJ.5.000315

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology