Infrared and Laser Engineering, Volume. 35, Issue 3, 302(2006)

High-power semiconductor lasers with small divergence

[in Chinese]*, [in Chinese], and [in Chinese]
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    References(5)

    [3] [3] OHKUBO M,NAMIKI S,IJICHI T,et al.0.98μm InGaAs-InGaAsPInGaP GRIN-SCH SL-SQW lasers for coupling high optical power into single-mode fiber[J].IEEE J Quantum Electronics,1993,29(6):1932-1935.

    [4] [4] ZHANG G.High power and high efficiency operation of Al-free InGaAs/InGaAsP InGaP GRINSCH SQW laser[J].Electron Lett,1994,30:1230-1232.

    [5] [5] ASONEN H,OVTCHINNIKV A,ZHANG G,et al.Aluminum-free 980 nm GaInAs/GaInAsP/GaInP pump lasers[J].IEEE J Quantum Electronics,1994,30:415-423.

    [6] [6] XU Zun-tu,ZHANG Jing-ming,MA Xiao-yu,et al.High efficiency low vertical divergence angle 980nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers[C]//Proceedings of SPIE,In-Plane Semiconductor Lasers Ⅳ,2000,3947:66-69.

    [7] [7] GAO Wei,XU Zun-tu,NELSON A.Low-divergence high-power 980 nm single-mode diode lasers with asymmetric epitaxial struture[C]//Proceedings of SPIE,Materials and Devices for Optical and Wireless Communications,2002,4905:154-156.

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    [in Chinese], [in Chinese], [in Chinese]. High-power semiconductor lasers with small divergence[J]. Infrared and Laser Engineering, 2006, 35(3): 302

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    Paper Information

    Category: 激光技术及应用

    Received: Dec. 16, 2005

    Accepted: Feb. 6, 2006

    Published Online: Oct. 20, 2006

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