Preface to Special Issue on Optoelectronic Neuromorphic Devices

Zhenyi Ni; Zhongqiang Wang; Jia Huang; Xiaodong Pi

doi:10.1088/1674-4926/25020802

Journal of Semiconductors, Volume. 46, Issue 2, 020101(2025)

Preface to Special Issue on Optoelectronic Neuromorphic Devices

Zhenyi Ni^1,2、*, Zhongqiang Wang^3、**, Jia Huang^4、***, and Xiaodong Pi^1,5、****

¹State key Laboratory of Silicon and Advanced Semiconductor Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

²Shangyu Institute of Semiconductor Materials, Shaoxing 312300, China

³Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, Changchun 130024, China

⁴School of Materials Science and Engineering & National Key Laboratory of Autonomous Intelligent Unmanned Systems, Tongji University, Shanghai 201804, China

⁵Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou 311200, China

show less

References(12)

[1] J M Bi, Y R Li, R Lu et al. Electrolyte-gated optoelectronic transistors for neuromorphic applications. J Semicond, 46, 021401(2025).

[2] X H Meng, R S Gao, X J Zhu et al. Ion-modulation optoelectronic neuromorphic devices: mechanisms, characteristics, and applications. J Semicond, 46, 021402(2025).

[3] Y R Wang, S S Liu, H X Zhang et al. Adaptive optoelectronic transistor forintelligent vision system. J Semicond, 46, 021404(2025).

[4] B Y Ye, X Liu, C Wu et al. Synaptic devices based on silicon carbide for neuromorphic computing. J Semicond, 46, 021403(2025).

[5] P Guo, J Y Zhang, J Huang. Recent progress in organic optoelectronic synaptic transistor arrays: fabricationstrategies and innovative applications of system integration. J Semicond, 46, 021405(2025).

[6] L B Yang, X S Gu, M Zhou et al. Deep-UV-photo-excited synaptic Ga2O3 nano-device withlow-energy consumption for neuromorphic computing. J Semicond, 46, 022401(2025).

[7] B W Zhong, X K Qin, Z X Li et al. Electropolymerized dopamine-based memristorsusing threshold switching behaviors for artificial current-activated spiking neurons. J Semicond, 46, 022402(2025).

[8] X R Pu, F Shu, Q F Wang et al. Visual synapse based on reconfigurable organic photovoltaic cell. J Semicond, 46, 022403(2025).

[9] T Zhan, J W Sun, J Lin et al. Nanowatt-level optoelectronic GaN-based heterostructure artificial synaptic device for associative learning and neuromorphic computing. J Semicond, 46, 022404(2025).

[10] J Y Jiang, B X Ding, S Y Li et al. All-opticalnonlinear activation functions realized on phase-change photonic integrated circuits with microheaters. J Semicond, 46, 022405(2025).

[11] X Q Ma, W B Zhang, Q Zheng et al. Reconfigurable organic ambipolar optoelectronic synaptic transistor for information security access. J Semicond, 46, 022406(2025).

[12] Q L Tian, K Xun, Z Z Li et al. Optoelectronic memristor based on a-C: Te film for muti-mode reservoir computing. J Semicond, 46, 022407(2025).

Tools

Get Citation

Copy Citation Text

Zhenyi Ni, Zhongqiang Wang, Jia Huang, Xiaodong Pi. Preface to Special Issue on Optoelectronic Neuromorphic Devices[J]. Journal of Semiconductors, 2025, 46(2): 020101

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Research Articles

Received: Feb. 8, 2025

Accepted: --

Published Online: Mar. 28, 2025

The Author Email: Ni Zhenyi (ZYNi), Wang Zhongqiang (ZQWang), Huang Jia (JHuang), Pi Xiaodong (XDPi)

DOI:10.1088/1674-4926/25020802

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology