Fig. 1. Operating principle of oxide-confinement VCSEL & standing wave distribution pattern in cavity

Fig. 2. VCSEL models with different oxide-confinements & current injection simulation diagram

Fig. 3. Two VCSEL models with oxide-confinement structures

Fig. 4. Mode gain plot and InP thickness fitting plot of VCSEL with different oxidized aperture

Fig. 5. I-L plots of VCSEL with different oxidized apertures with single oxide-confinement layer

Fig. 6. I-L diagram of VCSEL with an oxidized aperture of 10~12 μm

Fig. 7. I-L plots of VCSEL with different oxide-confinements

Fig. 8. Comparison of L-L and I-V diagrams of chips with or without oxide-confinements in the active region

Fig. 9. Comparison of PCE between two structures