[2] [2] Reznik R R, Shtrom I V, Soshnikov I P, et al. MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si (111) hybrid substrate［J］.Journal of Physics: Conference Series,2018,1135(1): 012036.

[3] [3] Yamaguchi M, Nishimoto Y. MBE growth of GaAs/AlGaAs quantum well on a patterned GaAs (001) substrate［J］.Physica E: Low-dimensional Systems and Nanostructures, 2004, 24(1-2): 143-147.

[4] [4] Boykin T B, Kharche N, Klimeck G, et al. Approximate band structures of semiconductor alloys from tight-binding supercell calculations［J］.Journal of Physics: Condensed Matter, 2007, 19(3): 036203.

[5] [5] Theis W M, Sanders G D, Evans K R, et al. Extrinsic contributions to photoreflectance of AlxGa1-xAs/GaAs quantum wells: an investigation of the‘Donor-related’feature［J］.Physical Review B, 1989, 39(15): 11038.

[6] [6] Dai X, Zhang S, Wang Z, et al. GaAs/AlGaAs nanowire photodetector［J］.Nano Letters, 2014,14(5): 2688-2693.

[10] [10] Degheidy A R, Elkenany E B. Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1-x As alloys［J］.Materials Science in Semiconductor Processing,2012,15(5): 505-515.

[15] [15] Kisomi, Fazeli A, and Mousavi S J. Ab initio calculations of the phonon and thermal properties of a (GaAs)1/(AlAs)1 superlattice and comparing them with the Ga0.5Al0.5As alloy［J］.Chinese Journal of Physics,2017,55(3): 1062-1066.