Surface ligand modified cesium lead bromide/silica sphere composites for low-threshold upconversion lasing

Qian Xiong; Sihao Huang; Zijun Zhan; Juan Du; Xiaosheng Tang; Zhiping Hu; Zhengzheng Liu; Zeyu Zhang; Weiwei Chen; Yuxin Leng

doi:10.1364/PRJ.442659

Photonics Research, Volume. 10, Issue 3, 628(2022)

Surface ligand modified cesium lead bromide/silica sphere composites for low-threshold upconversion lasing

Qian Xiong^1,2,3,4, Sihao Huang¹, Zijun Zhan², Juan Du^1,2,5,7、*, Xiaosheng Tang^6,8、*, Zhiping Hu², Zhengzheng Liu¹, Zeyu Zhang², Weiwei Chen⁶, and Yuxin Leng^1,2,3,9、*

Author Affiliations

¹State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China

²Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China

³School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

⁴Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁵School of Physics and Electronics, Shandong Normal University, Jinan 250014, China

⁶College of Optoelectronic Engineering, Chongqing University of Post and Telecommunications, Chongqing 400065, China

⁷e-mail: dujuan@mail.siom.ac.cn

⁸e-mail: xstang@cqupt.edu.cn

⁹e-mail: lengyuxin@mail.siom.ac.cn

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Figures & Tables(7)

Fig. 1. (a) Passivation and ligand modification procedure on the surface of the CsPbBr3 QDs. (b) XRD patterns and (c) FTIR spectra for CsPbBr3 QDs with different ligands. HRTEM images for (d) CsPbBr3-OAm and (e) CsPbBr3-OLA QDs.

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Fig. 2. (a) XPS profiles for CsPbBr3-OAm and CsPbBr3-OLA QDs, (b) Cs-3d spectrum, (c) Pb-4f spectrum, and (d) Br-3d spectrum.

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Fig. 3. (a) PL spectrum, (b) absorption spectrum, and (c) time-resolved PL decay of CsPbBr3-OAm and CsPbBr3-OLA QDs. PL stability measurement for (d) CsPbBr3-OAm and (e) CsPbBr3-OLA QDs under heating conditions. (f) PL intensity variation of QDs films over 10 h under heating conditions. (g) Photographs under daylight and 365 nm UV light of CsPbBr3-OAm and CsPbBr3-OLA QDs for 100 days in hexane. (h) PLQY variation of QDs solution in air over 100 days.

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Fig. 4. (a) TEM image, (b) HRTEM image, and (c) element mapping of CsPbBr3-OAm/SiO2 composite. (d) TEM image, (e) HRTEM image, and (f) element mapping of CsPbBr3-OLA/SiO2 composite.

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Fig. 5. Random lasing from the composite film under two-photon excitation. (a) Schematic of random lasing from CsPbBr3/SiO2 composite film upon 800 nm excitation above lasing threshold. (b) Power-dependent emission spectra from CsPbBr3-OAm/SiO2 composite film. (c) Integrated lasing intensity of CsPbBr3-OAm/SiO2 composite film as a function of power fluence showing the lasing threshold at 257.34 μJ/cm2. (d) Power-dependent emission spectra from CsPbBr3-OLA/SiO2 composite film. (e) Integrated lasing intensity of CsPbBr3-OLA/SiO2 composite film as a function of power fluence showing the lasing threshold at 79.81 μJ/cm2.

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Fig. 6. Gaussian fitting of a selected lasing peak corresponding to the Q-value from (a) CsPbBr3-OAm/SiO2 and (b) CsPbBr3-OLA/SiO2.

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Table 1. Time-Resolved PL Decays for CsPbBr₃-OLA QDs and CsPbBr₃-OAm QDs
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Table 1. Time-Resolved PL Decays for CsPbBr₃-OLA QDs and CsPbBr₃-OAm QDs
$τ_{1}$ (ns) $A_{1}$ (%) $τ_{2}$ (ns) $A_{2}$ (%) $τ_{a}$ (ns)
OLA-QDs 3.4 157.9 14.6 44.8 9.5
OAm-QDs 5.8 113.7 21.2 80.1 16.9

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Qian Xiong, Sihao Huang, Zijun Zhan, Juan Du, Xiaosheng Tang, Zhiping Hu, Zhengzheng Liu, Zeyu Zhang, Weiwei Chen, Yuxin Leng, "Surface ligand modified cesium lead bromide/silica sphere composites for low-threshold upconversion lasing," Photonics Res. 10, 628 (2022)

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