[1] B H Wang, J F Mu. High-speed Si-Ge avalanche photodiodes. PhotoniX, 3, 8(2022).

[2] D Q Liu. Study on the near-infrared COMS compatible avalanche photodetector. PhD Dissertation(2022).

[3] M Smit, K Williams, J van der Tol. Past, present, and future of InP-based photonic integration. APL Photonics, 4, 050901(2019).

[4] S Lischke, A Peczek, J S Morgan et al. Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz. Nat Photon, 15, 925(2021).

[5] G Wu, H Cao, M Jin et al. 2×2 SOI optical switch with robust high extinction ratio on all paths enabled by parabolic MMI coupler, 1(2023).

[6] J F Xia, M J Chen, A Rizzo et al. O-band microring resonator based switch-and-select silicon photonic switch fabric, 1(2022).

[7] L Qian, D Wu, D Liu et al. Infrared detector module for airborne hyperspectral LiDAR: Design and demonstration. Appl Opt, 62, 2161(2023).

[8] Y X Lin, Z Ahmad, S Y Ou et al. A 4-D FMCW LiDAR with ultra-high velocity sensitivity. J Lightwave Technol, 41, 6664(2023).

[9] X B Liu, X T Li, Z H Zhi et al. Three-electrode germanium-on-silicon avalanche photodiode array. Opt Lett, 48, 1846(2023).

[10] I H Giden. Photonic crystal based interferometric design for label-free all-optical sensing applications. Opt Express, 30, 21679(2022).

[11] J Romijn, S Vollebregt, L M Middelburg et al. Integrated 64 pixel UV image sensor and readout in a silicon carbide CMOS technology. Microsyst Nanoeng, 8, 114(2022).

[12] Y H Lai, M G Suh, Y K Lu et al. Earth rotation measured by a chip-scale ring laser gyroscope. Nat Photonics, 14, 345(2020).

[13] Y Tian, Y X Lin, J Y Zheng et al. 800Gb/s-FR4 specification and interoperability analysis, 1(2021).

[14] J Potet, G Simon, G Gaillard et al. Uncooled high speed Ge/Si avalanche photodiode for 50 Gbit/s-PON with 60 km reach, 1(2023).

[15] S Assefa, F N Xia, Y A Vlasov. Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects. Nature, 464, 80(2010).

[16] S Assefa, F N Xia, S W Bedell et al. CMOS-integrated high-speed MSM germanium waveguide photodetector. Opt Express, 18, 4986(2010).

[17] D Benedikovic, L Virot, G Aubin et al. 25 Gbps low-voltage hetero-structured silicon-germanium waveguide pin photodetectors for monolithic on-chip nanophotonic architectures. Photon Res, 7, 437(2019).

[18] D Benedikovic, L Virot, G Aubin et al. Comprehensive study on chip-integrated germanium pin photodetectors for energy-efficient silicon interconnects. IEEE J Quantum Electron, 56, 8400409(2020).

[19] J C Campbell. Recent advances in avalanche photodiodes. J Light Technol, 34, 278(2016).

[20] B H Wang, Z H Huang, X G Zeng et al. A compact model for Si—Ge avalanche photodiodes. 2018 IEEE 15th International Conference on Group IV Photonics (GFP). Cancun, Mexico. IEEE, 1(2018).

[21] B H Wang, Z H Huang, X G Zeng et al. 35Gb/s ultralow-voltage three-terminal Si-Ge avalanche photodiode, 1(2019).

[22] X G Zeng, Z H Huang, B H Wang et al. Silicon–germanium avalanche photodiodes with direct control of electric field in charge multiplication region. Optica, 6, 772(2019).

[23] A Samani, O Carpentier, E El-Fiky et al. Highly sensitive, 112 gb/s O-band waveguide coupled silicon-germanium avalanche photodetectors. 2019 Optical Fiber Communications Conference and Exhibition (OFC). San Diego, CA, USA. IEEE, 1(2019).

[24] M Y Huang, P F Cai, S Li et al. 56GHz waveguide Ge/Si avalanche photodiode, 1(2018).

[25] Q Y Zeng, Z X Pan, Z H Zeng et al. Space charge effects on the bandwidth of Ge/Si avalanche photodetectors. Semicond Sci Technol, 35, 035026(2020).

[26] J Q Zhang, H M Lin, M Liu et al. Research on the leakage current at sidewall of mesa Ge/Si avalanche photodiode. AIP Adv, 11, 075320(2021).

[27] Z H Huang, C Li, D Liang et al. 25 Gbps low-voltage waveguide Si–Ge avalanche photodiode. Optica, 3, 793(2016).

[28] B H Wang, Z H Huang, X G Zeng et al. A compact model for Si-Ge avalanche photodiodes over a wide range of multiplication gain. J Light Technol, 37, 3229(2019).

[29] S A Srinivasan, M Berciano, P De Heyn et al. 27 GHz silicon-contacted waveguide-coupled Ge/Si avalanche photodiode. J Light Technol, 38, 3044(2020).

[30] S A Srinivasan, J Lambrecht, D Guermandi et al. 56 gb/s NRZ O-band hybrid BiCMOS-silicon photonics receiver using Ge/si avalanche photodiode. J Lightwave Technol, 39, 1409(2021).

[31] Y L Xiang, H Z Cao, C Y Liu et al. High-performance waveguide Ge/Si avalanche photodiode with a lateral separate-absorption-charge-multiplication structure. Opt Express, 30, 11288(2022).

[32] Y L Xiang, H Z Cao, C Y Liu et al. High-speed waveguide Ge/Si avalanche photodiode with a gain-bandwidth product of 615 GHz. Optica, 9, 762(2022).

[33] X L Li, Y P Zhu, Z Liu et al. 75 GHz germanium waveguide photodetector with 64 Gbps data rates utilizing an inductive-gain-peaking technique. J Semicond, 44, 012301(2023).

[34] Y W Peng, Y Yuan, W V Sorin et al. Demonstration of an ultra-high-responsivity all-silicon avalanche photodetectors, 1(2023).

[35] J S Zhang, H W Xu, K H Tan et al. First Si-waveguide-integrated InGaAs/InAlAs avalanche photodiodes on SOI platform, 409(2022).

[36] D R Decker, C N Dunn. Determination of germanium ionization coefficients from small-signal IMPATT diode characteristics. IEEE Trans Electron Devices, 17, 290(1970).

[37] H T Chen, P Verheyen, P De Heyn et al. High-responsivity low-voltage 28-gb/s Ge p-i-n photodetector with silicon contacts. J Lightwave Technol, 33, 820(2015).

[38] C Bellegarde, E Pargon, C Sciancalepore et al. Optimization of H2 thermal annealing process for the fabrication of ultra-low loss sub-micron silicon-on-insulator rib waveguides. Silicon Photonics XIII, 1(2018).

[39] C Bellegarde, E Pargon, C Sciancalepore et al. Improvement of sidewall roughness of sub-micron silicon-on-insulator waveguides for low-loss on-chip links. Silicon Photonics XII, 10108, 1010816(2017).

[40] J Michel, J F Liu, L C Kimerling. High-performance Ge-on-Si photodetectors. Nature Photon, 4, 527(2010).

[41] K H Lee, S Y Bao, G Y Chong et al. Defects reduction of Ge epitaxial film in a germanium-on-insulator wafer by annealing in oxygen ambient. APL Mater, 3, 016102(2015).

[42] X Hu, H G Zhang, D Y Wu et al. High-performance germanium avalanche photodetector for 100 Gbit/s photonics receivers. Opt Lett, 46, 3837(2021).

[43] D Benedikovic, L Virot, G Aubin et al. 40 Gbps heterostructure germanium avalanche photo receiver on a silicon chip. Optica, 7, 775(2020).

[44] V Filippov, S Mitsuk, A Vlasov et al. Modelling of deformations and band diagram of semiconductor hetorostructure silicon-germanium, 1081(2023).

[45] V Reboud, A Gassenq, J M Hartmann et al. Germanium based photonic components toward a full silicon/germanium photonic platform. Prog Cryst Growth Charact Mater, 63, 1(2017).

[46] A K Rockwell, Y Yuan, A H Jones et al. Al0.8In0.2As0.23Sb0.77 avalanche photodiodes. IEEE Photon Technol Lett, 30, 1048(2018).

[47] D Q Liu, P Zhang, B Tang et al. High-performance waveguide-integrated Ge/Si avalanche photodetector with lateral multiplication region. Micromachines, 13, 649(2022).

[48] L K Yi, D Q Liu, D M Li et al. Waveguide-integrated Ge/Si avalanche photodiode with vertical multiplication region for 1310 nm detection. Photonics, 10, 750(2023).

[49] Y Yuan, Z H Huang, X G Zeng et al. High responsivity Si-Ge waveguide avalanche photodiodes enhanced by loop reflector. IEEE J Sel Top Quantum Electron, 28, 1(2022).

[50] R B Emmons. Avalanche-photodiode frequency response. J Appl Phys, 38, 3705(1967).

[51] D X Dai, M J W Rodwell, J E Bowers et al. Derivation of the small signal response and equivalent circuit model for a separate absorption and multiplication layer avalanche photodetector. IEEE J Sel Top Quantum Electron, 16, 1328(2010).

[52] N Duan, T Y Liow, A E J Lim et al. 310 GHz gain-bandwidth product Ge/Si avalanche photodetector for 1550 nm light detection. Opt Express, 20, 11031(2012).

[53] M Y Huang, K Magruder, Y Malinge et al. Recess-type waveguide integrated germanium on silicon avalanche photodiode, 1(2021).