Opto-Electronic Engineering, Volume. 32, Issue 10, 80(2005)

Influence of roughness on extreme ultra-violet lithography mask

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    References(6)

    [1] [1] D.G. STEARNS. X-ray scattering from interfacial roughness in multilayer structures[J]. J.Appl.Phys,1992,71(9):4286-4298.

    [2] [2] K.M. SKULINA,C.S. ALFORD,R.M. BIONTA,et al. Molybdenum-silicon multilayer mirrors for normal incidence in the extreme ultroviolet[J]. Appl. Optics,1995,34(19):3727-3730.

    [3] [3] P.A. KEAMEY,C.E. MOORE,S.I. TAN,et al. Mask blanks of extreme ultra-violet lithography: ion beam sputter deposition of low defect density Mo/Si multilayers[J]. J.Vac.Sci. Technol. B,1997,15(6):2452-2454.

    [4] [4] Eberhard SPILLER. Soft X-Ray Optics [M]. Bellingham, Washington:SPIE Optical Engineering Press,1994. 110-114.

    [5] [5] Weilun CHAO,Eric GULLIKSON,David ATTWOOD. Equivalent multilayer bandwidth and comparison between 13.4nm and 14.4nm for EUV throughput calculation[J]. SPIE,2001,4343:676-683.

    [6] [6] M. BUJAK,S. BURKHART,C. CERJAN,et al. Mask technology for EUV lithography[J]. SPIE,1999,3665:30-39.

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    [1] MIAO Hua, CHEN Yu, SONG Yulong, WANG Wensheng. Automatic Recognition Technology of Partial Masked Target[J]. Acta Photonica Sinica, 2013, 42(8): 997

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of roughness on extreme ultra-violet lithography mask[J]. Opto-Electronic Engineering, 2005, 32(10): 80

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    Received: Dec. 31, 2004

    Accepted: --

    Published Online: Nov. 14, 2007

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