Acta Optica Sinica, Volume. 30, Issue s1, 100301(2010)

A Method for Evaluating Life Time of Semiconductor Device Based on Electronic Speckle Pattern Interference

Yuan Zongheng*, Song Meijie, and Xiong Xianming
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    Based on the research of the actuality with microelectronic device reliability testing and electronic speckle pattern interferometer (ESPI), a method that predicts the specimen life time according to the change of out-of-plane displacement of packing is presented. In the method, temperature control system is used to provide the condition of accelerated temperature stress, and the working lifetime of specimen at normal temperature is estimated by the activation energy of specimen extracted according to out-of-plane displacement law. When the specimens S8550 are given the temperature range from 100 ℃ to 190 ℃, the speckle interference stripes are collected at every temperature points. Then the activation energy of specimen is extracted rapidly, and the working lifetime of the specimen at temperature of 50 ℃ and100 ℃ is obtained. The experimental results agree with the data in references well, which demonstrates the feasibility of the proposed method.

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    Yuan Zongheng, Song Meijie, Xiong Xianming. A Method for Evaluating Life Time of Semiconductor Device Based on Electronic Speckle Pattern Interference[J]. Acta Optica Sinica, 2010, 30(s1): 100301

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    Paper Information

    Category: Integrated Optics

    Received: Jun. 8, 2010

    Accepted: --

    Published Online: Dec. 13, 2010

    The Author Email: Zongheng Yuan (yuanzongheng@sina.com)

    DOI:10.3788/aos201030.s100301

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