Fig. 1. Characterization and Device Structure of Two-Dimensional Material Detectors：（a） schematic illustration of the device structure；（b） optical image showing the top aluminum electrode used for polarizing the ferroelectric film；（c） Raman spectrum of MoTe₂，highlighting its characteristic peaks；（d） atomic force microscope image of the device，with the red and black lines indicating the locations where the height was measured；（e） characterization of the material's thickness

Fig. 2. Device Electrical Performance Characterization：（a） transfer characteristics curve of a FeFET with the channel solely covered by P（VDF-TrFE）；（b） transfer characteristics of the FGFeFET and FeFET at the P_up state，with the inset depicting the type of charge carriers in the channel at a back-gate voltage（V_bg） of 0 V；（c） transfer characteristics of the FGFeFET and FeFET at the P_down state，with the inset indicating the type of charge carriers in the channel at a back-gate voltage（V_bg） of 0 V；（d） the types of most carriers in MoTe₂ channel under different polarization conditions；（e） transfer characteristics curve of a SFGFeFET with partial channel coverage by P（VDF-TrFE） and graphene/hexagonal boron nitride；（f） I_SD-V_SD curves of the SFGFeFET under various gate voltages

Fig. 3. Photocurrent measurement and response characteristics of the device: (a) schematic diagram of scanning photocurrent measurement of a SFGFeFET device; (b) photocurrent mapping at V_DS=0 V. Scale bar is 2 μm; (c) I_SD-V_SD curves of the MoTe₂ p–n junction under different laser powers at a wavelength of 520 nm; (d) response curves under different light powers at V_DS=0.2 V and λ=1 550 nm; (e) rise and decay times of photocurrent from 10% to 90% under λ=520 nm illumination; (f) power dependency of the short-circuit current and open-circuit voltage under λ=520 nm illumination; (g) power dependency of the photoresponsivity and detectivity under λ=520 nm illumination; (h) compare the response time and dark current density of photodetectors made of in-plane homojunction made of different materials. Different shapes in the figure mean different materials. References: BP^[22-23]; MoSe₂^[24]; MoTe₂^[11,25-26]; PbSe₂^[27]; WSe₂^[28-29]

Fig. 4. Current Characteristics and Logic Gate Functionality of the Device：（a） The wavelength of incident light is 1 270 nm，the intensity of incident light is 560 μW，and the current characteristics of different gate and source drain voltages are compared with the dark state. The dashed line is the dark current and the realization is the photocurrent；（b） Circuit diagram of the OR gate；（c） Logic "OR" gate the output voltage of the four input states. Insert： Equivalent circuit diagram；（d） Circuit diagrams for NAND and XOR gates；（e） Logic "NAND" gate the output voltage of the four input states. Insert： Equivalent circuit diagram；（f） Logic "XOR" gate the output voltage of the four input states