The new pre-cleaning process which uses hydrogen peroxide, low-concentration lye and ultrasonic before texturing is introduced. Compared with conventional pre-cleaning process, the new pre-cleaning process avoids the phenomenon of float-basket during production process, improves the cleanliness of the wafer surface and reduces the micro-roughness of the wafer surface. Observed through SEM after pre-cleaning, the texture surface size of the pyramid is small and uniform and the reflectivity also decreases. The monocrystal silicon wafer after new pre-cleaning texture process increases the absorption of incident light and helps to improve the short-circuit current and the conversion efficiency of cells.