Researching | Defect-induced Analogue Resistive Switching Behavior in FeOx-based Memristor and Synaptic Paired-pulse Facilitation Feature

Journal of Inorganic Materials, Volume. 38, Issue 4, 437(2023)

Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature

Tongyu WANG1... Haofeng RAN1, and Guangdong ZHOU12,* |Show fewer author(s)

Author Affiliations

¹1. College of Artificial Intelligence, Southwest University, Chongqing 400715, China

²2. Chongqing Key Laboratory of Brain-like Computing and Intelligent Control, Southwest University, Chongqing 400715, China

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Figures & Tables(5)

1. Structure and characterization of Ag/FeO_x/ITO memristors

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2. Results of memristor characteristics of Ag/FeO_x/ITO memristors

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3. Multiconductivity testing and biological synaptic simulation

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4. Results of fitting the physical mechanism of Ag/FeO_x/ITO memristors

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5. Physical model constructed based on trap energy level tunneling

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Tongyu WANG, Haofeng RAN, Guangdong ZHOU. Defect-induced Analogue Resistive Switching Behavior in FeO_x-based Memristor and Synaptic Paired-pulse Facilitation Feature [J]. Journal of Inorganic Materials, 2023, 38(4): 437

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Received: Nov. 30, 2022

Accepted: --

Published Online: Oct. 17, 2023

The Author Email: ZHOU Guangdong (zhougd@swu.edu.cn)

DOI:10.15541/jim20220721

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology