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Laser & Optoelectronics Progress, Volume. 55, Issue 4, 040201(2018)

Fabrication and Study of Micro Alkali-Metal Vapor Cell Applied to Chip Scale Atomic Clock

Yue Tang, Ziming Ren, Yunchao Li, Xuwen Hu, Yanjun Zhang, and Shubin Yan*
Author Affiliations
  • Key Laboratory of Instrumentation Science and Dynamic Measurement, Ministry of Education, North University of China, Taiyuan, Shanxi 030051, China
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    AbstractGet PDF(in Chinese)
    Figures&Tables (13)
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    References (17)
    Cited By (2)
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    Figures & Tables(13)
    Diagram of ICP etching system

    Fig. 1. Diagram of ICP etching system

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    [in Chinese]

    Fig. 1. [in Chinese]

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    Deep silicon etching machine. (a) Picture; (b) schematic of inside

    Fig. 2. Deep silicon etching machine. (a) Picture; (b) schematic of inside

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    Structures to be etched

    Fig. 3. Structures to be etched

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    Flow chart of etching process

    Fig. 4. Flow chart of etching process

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    Relationship between etching loop number and etching depth

    Fig. 5. Relationship between etching loop number and etching depth

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    3D schematic of silicon pore structure

    Fig. 6. 3D schematic of silicon pore structure

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    Schematic of etching results

    Fig. 7. Schematic of etching results

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    Picture of bonded alkali-metal vapor cell

    Fig. 8. Picture of bonded alkali-metal vapor cell

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    Schematic of experimental principle for saturated absorption

    Fig. 9. Schematic of experimental principle for saturated absorption

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    Saturated absorption of micro alkali-metal vapor cell under different temperatures. (a) 50 ℃; (b) 60 ℃; (c) 70 ℃; (d) 80 ℃

    Fig. 10. Saturated absorption of micro alkali-metal vapor cell under different temperatures. (a) 50 ℃; (b) 60 ℃; (c) 70 ℃; (d) 80 ℃

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    (a) Schematic of D2 line transition in 87Rb atom; (b) saturated absorption curve of MEMS vapor cell at 80 ℃

    Fig. 11. (a) Schematic of D2 line transition in 87Rb atom; (b) saturated absorption curve of MEMS vapor cell at 80 ℃

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    • Table 1. Main parameters of deep silicon etching

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      Table 1. Main parameters of deep silicon etching

      ProcessDurationtime /sPower 1 /WPower 2 /WNumber ofloopsFlow rate of SF6 /(mL·min-1)Flow rate of C4F8 /(mL·min-1)
      Deactivation125001601300
      Etching ofdeactivation layers1.5250022404001
      Main etching53500523009961
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    Yue Tang, Ziming Ren, Yunchao Li, Xuwen Hu, Yanjun Zhang, Shubin Yan. Fabrication and Study of Micro Alkali-Metal Vapor Cell Applied to Chip Scale Atomic Clock[J]. Laser & Optoelectronics Progress, 2018, 55(4): 040201

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    Paper Information

    Category: Atomic and Molecular Physics

    Received: Oct. 26, 2017

    Accepted: --

    Published Online: Sep. 11, 2018

    The Author Email: Yan Shubin (shubin_yan@nuc.edu.cn)

    DOI:10.3788/LOP55.040201

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology