Acta Photonica Sinica, Volume. 36, Issue 3, 405(2007)

The Characteristics of GaAs and InP Photoconductive Semiconductor Switch

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    References(5)

    [1] [1] AUSTON D H.Picosescond optoelectronic switching and gating in silicon[J].Appl Phys Lett,1975,26(3):101-103.

    [5] [5] ZHAO Y W,LUO Y L,FUNG S.Influence of Fe doping concentration on some properties of semi insulating InP[J].Chinese Journal of Semiconductor,2002,23(10):1041-1045.

    [9] [9] ISLAM N E,SCHAMILOGLU E,FLEDDERMANN C B.Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications[J].J Appl Phys,1999,86(5):1754-1758.

    [10] [10] ZHAO H M,HADIZAD P,HUR J H,et al.Avalanche injection model for the lock-on effect in Ⅲ-Ⅴ power photoconductive switches[J].J Appl Phys,1993,73(44):1807-1812.

    [11] [11] LEE C H.Picosecond optoelectronic devices[M].Orlando:Academic Press,1984:73-116.

    CLP Journals

    [1] Zhu Shaolan, Zhao Wei, Liu Baiyu, Shi Wei, Yang Yanlong. Cavity Dumped Laser Using Fast GaAs Photoconductive Switch[J]. Chinese Journal of Lasers, 2011, 38(5): 502003

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Characteristics of GaAs and InP Photoconductive Semiconductor Switch[J]. Acta Photonica Sinica, 2007, 36(3): 405

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    Paper Information

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    Received: Aug. 13, 2006

    Accepted: --

    Published Online: Sep. 17, 2007

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