Opto-Electronic Engineering, Volume. 33, Issue 3, 101(2006)
Temperature field simulation of GaN material during Al2O3/GaN laser lift-off
References(6)
[1] [1] Masayoshi KOIKE,Naoki SHIBATA,Hisaki KATO,et al.Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications[J].IEEE Journal on Selected Topics in Quantum Electronics,2002,8(2):271-277.
[2] [2] NAKAMURA S,SENOH M,NAGAHAMA S,et al.Violet InGaN/GaN/AlGaN based laser diodes with an output power of 420mW[J].Jpn.J.Appl.Phys.Part 2-Lett,1998,37(6A):1627-1629.
[3] [3] T.EGAWA,H.OHMURA,H.ISHIKAWA,et al.Demonstration of an InGaN-based light emitting diode on an AlN/Sapphire template by metalorganic chemical vapor deposition[J].Appl.Phys.Lett,2002,81(2):292-294.
[4] [4] Chia-Ming LEE,Chang-Ceng CHUO,I-Ling CHEN,et al.High-brightness inverted InGaN -GaN multi-quantum-well light-emitting diodes without a transparent conductive layer[J].IEEE Electron Device Letters,2003,24(3):156-158.
[5] [5] W.S.WONG,T.SANDS,N.W.CHEUNG,et al.InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off[J].Appl.Phys.Lett,2000,77(18):2822-2824.
[6] [6] Martin Von ALLMEN,Andreas BLASTTER.Laser-beam interactions with materials[M].Berlin:Springer-Verlag,1995.
CLP Journals
Tools
Get Citation
Copy Citation Text
[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101
Paper Information
© Copyright 2018-2021 | Chinese Laser Press.
All Rights Reserved 沪ICP备15018463号-20