Opto-Electronic Engineering, Volume. 33, Issue 3, 101(2006)

Temperature field simulation of GaN material during Al2O3/GaN laser lift-off

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101

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    Received: Jan. 6, 2006

    Accepted: --

    Published Online: Nov. 14, 2007

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