Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach

Fei Hu; Li Wu; Xiyuan Dai; Shuai Li; Ming Lu; Jian Sun

doi:10.1364/PRJ.417866

Photonics Research, Volume. 9, Issue 7, 1324(2021)

Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach

Fei Hu¹, Li Wu¹, Xiyuan Dai¹, Shuai Li¹, Ming Lu^1,2、*, and Jian Sun^1,3、*

Author Affiliations

¹Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China

²e-mail: minglu55@fudan.edu.cn

³e-mail: jsun@fudan.edu.cn

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Figures & Tables(8)

Fig. 1. Schematic of fabrication flow of Si PD.

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Fig. 2. (a) Bird’s-eye view and (b) cross-sectional SEM image of b-Si/Pt after annealing at 950°C.

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Fig. 3. (a) Magnified SEM image of surface morphology of b-Si/Pt after annealing at 950°C; (b) elemental maps of Pt and Si; (c) EDX spectra of the sample; (d) depth distributions of Pt after annealing at different temperatures.

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Fig. 4. (a) Absorption spectra and (b) absorption at 1550 nm for b-Si/Pt at room temperature and after annealing at 500°C, 650°C, 800°C, 950°C, and 1100°C. (c) XRD spectra for b-Si/Pt at room temperature and after annealing at 500°C and 950°C.

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Fig. 5. (a) Schematic diagram of the b-Si NIR PD with nano-Schottky detector arrays. (b) SEM image of three spots of black Si covered by Al2O3 passivation layer. (c) Energy level diagram of the b-Si NIR PD with nano-Schottky detector arrays.

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Fig. 6. I-V curves for b-Si NIR PD (a) at room temperature and (b) after annealing at 950°C. (c) Current for 950°C annealed b-Si NIR PD under dark condition and 1550 nm illumination.

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Table 1. Elemental Analysis of Three Spots of Black Si Covered by Al2O3 Passivation Layer in Fig. 5(b)
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Table 1. Elemental Analysis of Three Spots of Black Si Covered by Al2O3 Passivation Layer in Fig. 5(b)
Spectrum Label Spectrum 13 Spectrum 14 Spectrum 15
C 9.25 10.28 10.93
O 10.13 7.74 4.18
Al 2.23 1.11 0.94
Si 78.39 80.87 83.94
Total 100.00 100.00 100.00

Table 2. Responsivity and Specific Detectivity of 950°C Annealed b-Si NIR PD at Biased Voltages of −1.0, −1.5, and −2.0 V
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Table 2. Responsivity and Specific Detectivity of 950°C Annealed b-Si NIR PD at Biased Voltages of −1.0, −1.5, and −2.0 V
Biased Voltage (V) −1.0 −1.5 −2.0
Responsivity (mA/W) 147.6 293.8 478.2
Detectivity ( $cm \cdot {Hz}^{1 / 2} / W$ ) $9.79 \times 10^{8}$ $1.88 \times 10^{9}$ $2.97 \times 10^{9}$

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Fei Hu, Li Wu, Xiyuan Dai, Shuai Li, Ming Lu, Jian Sun. Achieving high-responsivity near-infrared detection at room temperature by nano-Schottky junction arrays via a black silicon/platinum contact approach[J]. Photonics Research, 2021, 9(7): 1324

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Paper Information

Category: Optoelectronics

Received: Dec. 17, 2020

Accepted: Apr. 30, 2021

Published Online: Jul. 1, 2021

The Author Email: Ming Lu (minglu55@fudan.edu.cn), Jian Sun (jsun@fudan.edu.cn)

DOI:10.1364/PRJ.417866

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Elemental Analysis of Three Spots of Black Si Covered by Al2O3 Passivation Layer in Fig. 5(b)

Table 1. Elemental Analysis of Three Spots of Black Si Covered by Al2O3 Passivation Layer in Fig. 5(b)

Table 2. Responsivity and Specific Detectivity of 950°C Annealed b-Si NIR PD at Biased Voltages of −1.0, −1.5, and −2.0 V

Table 2. Responsivity and Specific Detectivity of 950°C Annealed b-Si NIR PD at Biased Voltages of −1.0, −1.5, and −2.0 V