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Chinese Optics Letters, Volume. 2, Issue 11, 11647(2004)

High power AlGaInP laser diodes with zinc-diffused window mirror structure

Yun Xu1、*, Qing Cao1,2, Xiaopeng Zhu1, Guohua Yang1, Qiaoqiang Gan1, Guofeng Song1, Liang Guo1,2, Yuzhang Li1,2, and Lianghui Chen1
Author Affiliations
  • 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
  • 2E-O National Co. Ltd., Huizhou 516023
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    [1] Lin Tao, Duan Yupeng, Zheng Kai, Chong Feng, Ma Xiaoyu. High Power 657 nm Laser Diodes with Nonabsorbing Windows[J]. Chinese Journal of Lasers, 2009, 36(1): 104

    [2] Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, Xiaoyu Ma. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. Chinese Optics Letters, 2006, 4(1): 0127

    [3] [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power 650 nm Red Semiconductor Laser with Transparent Window[J]. Chinese Journal of Lasers, 2007, 34(9): 1182

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    Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, Lianghui Chen. High power AlGaInP laser diodes with zinc-diffused window mirror structure[J]. Chinese Optics Letters, 2004, 2(11): 11647

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    Paper Information

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    Received: Apr. 19, 2004

    Accepted: --

    Published Online: Jun. 6, 2006

    The Author Email: Yun Xu (xuyun@red.semi.ac.cn)

    DOI:

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology